International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland and WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
Phys Rev Lett. 2023 Feb 24;130(8):086202. doi: 10.1103/PhysRevLett.130.086202.
Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence of paramagnetic acceptor dopants elucidates a variety of hitherto puzzling properties of two-dimensional topological semiconductors at the topological phase transition and in the regime of the quantum spin Hall effect. The concepts of resonant states, charge correlation, Coulomb gap, exchange interaction between conducting electrons and holes localized on acceptors, strong coupling limit of the Kondo effect, and bound magnetic polaron explain a short topological protection length, high hole mobilities compared with electron mobilities, and different temperature dependence of the spin Hall resistance in HgTe and (Hg,Mn)Te quantum wells.
半导体对静电门控和掺杂的敏感性使得它们在信息通信和新能源技术中得到广泛应用。本文定量地证明了，在二维拓扑半导体的拓扑相变和量子自旋霍尔效应区域，无可调参数的(paramagnetic acceptor dopants)存在，可以阐明各种迄今令人困惑的性质。共振态、电荷相关、库仑能隙、局域在受主上的导带电子和空穴之间的交换相互作用、Kondo 效应的强耦合极限以及束缚磁极化子的概念，解释了短拓扑保护长度、与电子迁移率相比的高空穴迁移率以及 HgTe 和 (Hg,Mn)Te 量子阱中自旋霍尔电阻的不同温度依赖性。
