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碳化硅的制造:碳前驱体的影响。

Manufacture of SiC: Effect of Carbon Precursor.

作者信息

Ramos-Fernández Enrique V, Narciso Javier

机构信息

Laboratorio de Materiales Avanzados, Departamento de Química Inorgánica, Instituto Universitario de Materiales de Alicante, Universidad de Alicante, Apartado 99, E-03080 Alicante, Spain.

Instituto de Investigación Sanitaria y Biomédica de Alicante (ISABIAL), E-03080 Alicante, Spain.

出版信息

Materials (Basel). 2023 Mar 1;16(5):2034. doi: 10.3390/ma16052034.

DOI:10.3390/ma16052034
PMID:36903150
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10004378/
Abstract

SiC is one of the most important ceramics at present due to its excellent properties and wide range of applications. The industrial production method, known as the Acheson method, has not changed in 125 years. Because the synthesis method in the laboratory is completely different, laboratory optimisation may not be extrapolated to the industrial level. In the present study, the results at the industrial level and at the laboratory level of the synthesis of SiC are compared. These results show that it is necessary to make a more detailed analysis of the coke than the traditional one; therefore, the Optical Texture Index (OTI) should be included, as well as the analysis of the metals that form the ashes. It has been found that the main influencing factors are OTI and the presence of Fe and Ni in the ashes. It has been determined that the higher the OTI, as well as the Fe and Ni content, the better the results obtained. Therefore, the use of regular coke is recommended in the industrial synthesis of SiC.

摘要

由于其优异的性能和广泛的应用,碳化硅是目前最重要的陶瓷材料之一。其工业生产方法,即艾奇逊法,在125年里一直未变。由于实验室的合成方法完全不同,实验室的优化可能无法推广到工业层面。在本研究中,对碳化硅合成的工业层面和实验室层面的结果进行了比较。这些结果表明,有必要比传统方法更详细地分析焦炭;因此,应纳入光学纹理指数(OTI)以及对形成灰分的金属的分析。已经发现主要影响因素是OTI以及灰分中Fe和Ni的存在。已经确定,OTI以及Fe和Ni含量越高,获得的结果越好。因此,建议在碳化硅的工业合成中使用普通焦炭。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/71eab2466305/materials-16-02034-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/ec219fb16713/materials-16-02034-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/a49c17bfc6b6/materials-16-02034-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/e755ac36b1ad/materials-16-02034-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/c7d0000d5b97/materials-16-02034-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/0ccfe7cb7ea4/materials-16-02034-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/e4043d9db862/materials-16-02034-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/71eab2466305/materials-16-02034-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/ec219fb16713/materials-16-02034-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/a49c17bfc6b6/materials-16-02034-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/e755ac36b1ad/materials-16-02034-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/c7d0000d5b97/materials-16-02034-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/0ccfe7cb7ea4/materials-16-02034-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/e4043d9db862/materials-16-02034-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8428/10004378/71eab2466305/materials-16-02034-g007.jpg

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Graphene Translucency and Interfacial Interactions in the Gold/Graphene/SiC System.金/石墨烯/碳化硅体系中的石墨烯透明度与界面相互作用
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