Hong Da Hee, Yoo Jae Hoon, Park Won Ji, Kim So Won, Kim Jong Hwan, Uhm Sae Hoon, Lee Hee Chul
Department of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
EN2CORE Technology Inc., Daejeon 18469, Republic of Korea.
Nanomaterials (Basel). 2023 Feb 27;13(5):900. doi: 10.3390/nano13050900.
HfZrO (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal-oxide-semiconductor (CMOS) process. This study examined the physical and electrical properties of HZO thin films deposited by two plasma-enhanced atomic layer deposition (PEALD) methods- direct plasma atomic layer deposition (DPALD) and remote plasma atomic layer deposition (RPALD)-and the effects of plasma application on the properties of HZO thin films. The initial conditions for HZO thin film deposition, depending on the RPALD deposition temperature, were established based on previous research on HZO thin films deposited by the DPALD method. The results show that as the measurement temperature increases, the electric properties of DPALD HZO quickly deteriorate; however, the RPALD HZO thin film exhibited excellent fatigue endurance at a measurement temperature of 60 °C or less. HZO thin films deposited by the DPALD and RPALD methods exhibited relatively good remanent polarization and fatigue endurance, respectively. These results confirm the applicability of the HZO thin films deposited by the RPALD method as ferroelectric memory devices.
铪锆氧化物（HZO）薄膜具有铁电特性，并且由于其与互补金属氧化物半导体（CMOS）工艺的兼容性，被认为适用于下一代存储器件。本研究考察了通过两种等离子体增强原子层沉积（PEALD）方法——直接等离子体原子层沉积（DPALD）和远程等离子体原子层沉积（RPALD）——沉积的HZO薄膜的物理和电学性质，以及等离子体施加对HZO薄膜性质的影响。基于先前对通过DPALD方法沉积的HZO薄膜的研究，根据RPALD沉积温度确定了HZO薄膜沉积的初始条件。结果表明，随着测量温度升高，DPALD HZO的电学性质迅速恶化；然而，RPALD HZO薄膜在60℃或更低的测量温度下表现出优异的抗疲劳性。通过DPALD和RPALD方法沉积的HZO薄膜分别表现出相对良好的剩余极化和抗疲劳性。这些结果证实了通过RPALD方法沉积的HZO薄膜作为铁电存储器件的适用性。
