Bondareva Julia V, Chernodoubov Daniil A, Dubinin Oleg N, Tikhonov Andrey A, Simonov Alexey P, Suetin Nikolay V, Tarkhov Mikhail A, Popov Zakhar I, Kvashnin Dmitry G, Evlashin Stanislav A, Safonov Alexander A
Center for Materials Technologies, Skolkovo Institute of Science and Technology, 121205 Moscow, Russia.
Emanuel Institute of Biochemical Physics of the Russian Academy of Sciences, 119334 Moscow, Russia.
Polymers (Basel). 2023 Feb 28;15(5):1214. doi: 10.3390/polym15051214.
The efficiency of electronic microchip-based devices increases with advancements in technology, while their size decreases. This miniaturization leads to significant overheating of various electronic components, such as power transistors, processors, and power diodes, leading to a reduction in their lifespan and reliability. To address this issue, researchers are exploring the use of materials that offer efficient heat dissipation. One promising material is a polymer-boron nitride composite. This paper focuses on 3D printing using digital light processing of a model of a composite radiator with different boron nitride fillings. The measured absolute values of the thermal conductivity of such a composite in the temperature range of 3-300 K strongly depend on the concentration of boron nitride. Filling the photopolymer with boron nitride leads to a change in the behavior of the volt-current curves, which may be associated with the occurrence of percolation currents during the deposition of boron nitride. The ab initio calculations show the behavior and spatial orientation of BN flakes under the influence of an external electric field at the atomic level. These results demonstrate the potential use of photopolymer-based composite materials filled with boron nitride, which are manufactured using additive techniques, in modern electronics.
基于电子微芯片的设备效率随着技术进步而提高，同时其尺寸减小。这种小型化导致各种电子元件，如功率晶体管、处理器和功率二极管出现严重过热，从而缩短其使用寿命并降低可靠性。为了解决这个问题，研究人员正在探索使用具有高效散热性能的材料。一种很有前景的材料是聚合物 - 氮化硼复合材料。本文重点研究了利用数字光处理技术对具有不同氮化硼填充物的复合散热器模型进行3D打印。在3 - 300 K温度范围内，这种复合材料的热导率测量绝对值强烈依赖于氮化硼的浓度。用氮化硼填充光聚合物会导致伏安曲线行为发生变化，这可能与氮化硼沉积过程中渗流电流的出现有关。从头算计算在原子水平上展示了氮化硼薄片在外部电场影响下的行为和空间取向。这些结果证明了使用添加剂技术制造的、填充有氮化硼的基于光聚合物的复合材料在现代电子学中的潜在用途。
