Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Napoli, Via Cintia, 80126 Napoli, Italy.
Department of Physics "E. Pancini", University of Naples "Federico II", Via Cintia, 80126 Napoli, Italy.
Sensors (Basel). 2023 Feb 21;23(5):2386. doi: 10.3390/s23052386.
The photosensitivity, responsivity, and signal-to-noise ratio of organic phototransistors depend on the timing characteristics of light pulses. However, in the literature, such figures of merit (FoM) are typically extracted in stationary conditions, very often from IV curves taken under constant light exposure. In this work, we studied the most relevant FoM of a DNTT-based organic phototransistor as a function of the timing parameters of light pulses, to assess the device suitability for real-time applications. The dynamic response to light pulse bursts at ~470 nm (close to the DNTT absorption peak) was characterized at different irradiances under various working conditions, such as pulse width and duty cycle. Several bias voltages were explored to allow for a trade-off to be made between operating points. Amplitude distortion in response to light pulse bursts was also addressed.
有机光电晶体管的光电灵敏度、响应率和信噪比取决于光脉冲的定时特性。然而，在文献中，这些质量因数（FoM）通常是在静态条件下提取的，通常是从恒定光照射下获得的 IV 曲线中提取的。在这项工作中，我们研究了基于 DNTT 的有机光电晶体管的最相关 FoM 作为光脉冲定时参数的函数，以评估器件在实时应用中的适用性。在不同的工作条件下，例如脉冲宽度和占空比，在不同辐照度下对~470nm（接近 DNTT 吸收峰）的光脉冲突发的动态响应进行了表征。探索了几个偏置电压，以在工作点之间进行权衡。还解决了光脉冲突发响应中的幅度失真问题。
