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界面S-O键特别促进了CuInS/InO异质结中的Z型电荷分离,以实现高效的光催化活性。

Interfacial S-O bonds specifically boost Z-scheme charge separation in a CuInS/InO heterojunction for efficient photocatalytic activity.

作者信息

Fu Xiaofei, Tao Junwu, Zhao Zizhou, Sun Siwen, Zhao Lin, He Zuming, Gao Yong, Xia Yongmei

机构信息

School of Resources and Environmental Engineering, Jiangsu University of Technology Changzhou 213001 China

School of Microelectronics and Control Engineering, Changzhou University Changzhou 213164 China.

出版信息

RSC Adv. 2023 Mar 13;13(12):8227-8237. doi: 10.1039/d3ra00043e. eCollection 2023 Mar 8.

DOI:10.1039/d3ra00043e
PMID:36922941
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10009657/
Abstract

Reducing the recombination rate of photoexcited electron-hole pairs is always a great challenging work for the photocatalytic technique. In response to this issue, herein, a novel Z-scheme CuInS/InO with interfacial S-O linkages was synthesized by a hydrothermal and subsequently annealing method. The Fourier transform infrared (FT-IR) and X-ray photoelectron spectrometer (XPS) measurements confirmed the formation of covalent S-O bonds between CuInS and InO. The quenching and electron spin resonance (ESR) tests revealed the Z-scheme transfer route of photogenerated carriers over the CuInS/InO heterojunctions, which was further verified theoretically density functional theory (DFT) calculations. As expected, the CuInS/InO heterojunctions showed significantly boosted photocatalytic activities for lomefloxacin degradation and Cr(vi) reduction under visible light illumination compared with the bare materials. Accordingly, a synergistic photocatalytic mechanism of Z-scheme heterostructures and interfacial S-O bonding was proposed, in which the S-O linkage could act as a specific bridge to modify the Z-scheme manner for accelerating the interfacial charge transmission. Furthermore, the CuInS/InO heterojunction also exhibited excellent performance perceived in the stability and reusability tests. This work provides a new approach for designing and fabricating novel Z-scheme heterostructures with a high-efficiency charge transfer route.

摘要

降低光激发电子 - 空穴对的复合率一直是光催化技术面临的一项极具挑战性的工作。针对这一问题,本文通过水热法和随后的退火方法合成了一种具有界面S - O键的新型Z型CuInS/InO。傅里叶变换红外光谱(FT - IR)和X射线光电子能谱(XPS)测量证实了CuInS和InO之间形成了共价S - O键。猝灭和电子自旋共振(ESR)测试揭示了光生载流子在CuInS/InO异质结上的Z型转移途径,这在理论上通过密度泛函理论(DFT)计算得到了进一步验证。正如预期的那样,与裸材料相比,CuInS/InO异质结在可见光照射下对洛美沙星降解和Cr(Ⅵ)还原表现出显著增强的光催化活性。因此,提出了Z型异质结构和界面S - O键合的协同光催化机制,其中S - O键可以作为一个特定的桥梁来改变Z型方式以加速界面电荷传输。此外,CuInS/InO异质结在稳定性和可重复使用性测试中也表现出优异的性能。这项工作为设计和制造具有高效电荷转移途径的新型Z型异质结构提供了一种新方法。

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