Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
Nano Lett. 2023 Jun 14;23(11):5399-5407. doi: 10.1021/acs.nanolett.2c04599. Epub 2023 Mar 17.
NbO-based Mott memristors exhibit fast threshold switching behaviors, making them suitable for spike generators in neuromorphic computing and stochastic clock generators in security devices. In these applications, a high output spike amplitude is necessary for threshold level control and accurate signal detection. Here, we propose a materialwise solution to obtain the high amplitude spikes by inserting Au nanodots into the NbO device. The Au nanodots enable increasing the threshold voltage by modulating the oxygen contents at the electrode-oxide interface, providing a higher ON current compared to nanodot-free NbO devices. Also, the reduction of the local switching region volume decreases the thermal capacitance of the system, allowing the maximum spike amplitude generation. Consequently, the Au nanodot incorporation increases the spike amplitude of the NbO device by 6 times, without any additional external circuit elements. The results are systematically supported by both a numerical model and a finite-element-method-based multiphysics model.
基于 NbO 的莫特忆阻器具有快速的阈值切换特性，使其适用于神经形态计算中的尖峰发生器和安全设备中的随机时钟发生器。在这些应用中，高输出尖峰幅度对于阈值电平控制和准确的信号检测是必要的。在这里，我们提出了一种通过在 NbO 器件中插入 Au 纳米点来获得高幅度尖峰的材料解决方案。Au 纳米点通过调节电极-氧化物界面处的氧含量来提高阈值电压，与无纳米点的 NbO 器件相比，提供了更高的导通电流。此外，局部开关区域体积的减小降低了系统的热电容，从而允许产生最大的尖峰幅度。因此，Au 纳米点的掺入使 NbO 器件的尖峰幅度增加了 6 倍，而无需任何额外的外部电路元件。这一结果得到了数值模型和基于有限元方法的多物理模型的系统支持。
