Zhang Song, Wang Chongjie, Gao Tenghua, Hu Jinrong, Lu Pengjian, Guo Bingjian, Xu Qingfang, Liu Kai, Li Baowen, Tu Rong, Yang Meijun, Ando Kazuya
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
School of Materials Science and Engineering, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China.
ACS Appl Mater Interfaces. 2023 Mar 29;15(12):15965-15975. doi: 10.1021/acsami.2c22143. Epub 2023 Mar 19.
Strong electromagnetic wave reflection loss concomitant with second emission pollution limits the wide applications of electromagnetic interference (EMI) shielding textiles. Decoration of textiles by using various dielectric materials has been found efficient for the development of highly efficient EMI shielding textiles, but it is still a challenge to obtain EMI shielding composites with thin thickness. A route of interfacial engineering may offer a twist to overcome these obstacles. Here, we fabricated a Ni nanoparticle/SiC nanowhisker/carbon cloth nanoheterostructure, where SiC nanowhiskers were deposited by a simple manufacturing method, namely, laser chemical vapor deposition (LCVD), directly grown on carbon cloth. Through directly constructing a Ni/SiC interface, we find that the formation of Schottky contact can influence the interfacial polarization associated with the generation of dipole electric fields, leading to an enhancement of dielectric loss. A striking feature of this interfacial engineering strategy is able to enhance the absorption of the incident electromagnetic wave while suppressing the reflection. As a result, our Ni/SiC/carbon cloth exhibits an excellent EMI shielding effectiveness of 68.6 dB with a thickness of only 0.39 mm, as well as high flexibility and long-term duration stability benefited from the outstanding mechanical properties of SiC nanowiskers, showing potential for EMI shielding applications.
与二次发射污染相伴的强电磁波反射损耗限制了电磁干扰（EMI）屏蔽纺织品的广泛应用。通过使用各种介电材料对纺织品进行装饰已被证明对开发高效EMI屏蔽纺织品是有效的，但获得具有薄厚度的EMI屏蔽复合材料仍然是一个挑战。界面工程的途径可能提供一种克服这些障碍的方法。在此，我们制备了一种镍纳米颗粒/碳化硅纳米晶须/碳布纳米异质结构，其中碳化硅纳米晶须通过一种简单的制造方法，即激光化学气相沉积（LCVD），直接生长在碳布上。通过直接构建镍/碳化硅界面，我们发现肖特基接触的形成会影响与偶极电场产生相关的界面极化，从而导致介电损耗增强。这种界面工程策略的一个显著特点是能够增强对入射电磁波的吸收，同时抑制反射。结果，我们的镍/碳化硅/碳布在仅0.39毫米的厚度下表现出68.6分贝的优异EMI屏蔽效能，并且由于碳化硅纳米晶须出色的机械性能而具有高柔韧性和长期稳定性，显示出在EMI屏蔽应用中的潜力。
