School of Materials and Mechanic & Electrical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330038, People's Republic of China.
School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, People's Republic of China.
J Phys Condens Matter. 2023 Mar 31;35(24). doi: 10.1088/1361-648X/acc5ca.
We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using the physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr:Te) show ferromagnetism, butterfly-like negative magnetoresistance in the low temperature (<3.8 K) and low field (<0.15 T) region, and high Hall mobility, e.g. 1320 cmVsat 30 K and 350 cmVsat 300 K, implying that Cr:Te crystals are ferromagnetic elemental semiconductors. When// [001] // I, the maximum negative MR is ∼-27% at= 20 K and= 8 T. In the low temperature semiconducting region, Cr:Te crystals show strong discrete scale invariance dominated logarithmic quantum oscillations when the direction of the magnetic fieldis parallel to the [100] crystallographic direction (// [100]) and show Landau quantization dominated Shubnikov-de Haas oscillations for// [210] direction, which suggests the broken rotation symmetry of the Fermi pockets in the Cr:Te crystals. The findings of coexistence of multiple quantum oscillations and ferromagnetism in such an elemental quantum material may inspire more study of narrow bandgap semiconductors with ferromagnetism and quantum phenomena.
我们使用物理气相传输法合成了过渡金属掺杂的铁磁元素单晶半导体，其具有量子振荡。7.7 原子%的 Cr 掺杂碲晶体（Cr:Te）表现出铁磁性，在低温（<3.8 K）和低场（<0.15 T）区域呈现蝴蝶状负磁阻，以及高霍尔迁移率，例如在 30 K 时为 1320 cmVsat，在 300 K 时为 350 cmVsat，表明 Cr:Te 晶体是铁磁元素半导体。当// [001] // I 时，在= 20 K 和= 8 T 时最大负 MR 约为-27%。在低温半导体区域，当磁场方向// [100] // （// [100] //）时，Cr:Te 晶体表现出强烈的离散标度不变性主导的对数量子振荡，当磁场方向// [210] // 时，表现出 Landau 量子化主导的 Shubnikov-de Haas 振荡，这表明 Cr:Te 晶体中费米口袋的旋转对称性被破坏。在这种元素量子材料中同时存在多种量子振荡和铁磁性的发现可能会激发更多对具有铁磁性和量子现象的窄带隙半导体的研究。
