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YPdBi 赫斯勒拓扑绝缘体单晶中的大线性磁阻和舒布尼科夫-德哈斯振荡

Large linear magnetoresistance and Shubnikov-de Hass oscillations in single crystals of YPdBi Heusler topological insulators.

作者信息

Wang Wenhong, Du Yin, Xu Guizhou, Zhang Xiaoming, Liu Enke, Liu Zhongyuan, Shi Youguo, Chen Jinglan, Wu Guangheng, Zhang Xi-Xiang

机构信息

State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

出版信息

Sci Rep. 2013;3:2181. doi: 10.1038/srep02181.

Abstract

We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.

摘要

我们报告了在Y Pd Bi 赫斯勒拓扑绝缘体单晶中观察到的大线性磁电阻(MR)和舒布尼科夫-德哈斯(SdH)量子振荡。由于成功获得了高质量的Y Pd Bi 单晶,在7 T的中等磁场下,观察到在5 K时高达350%以及在300 K时超过120%的大的非饱和线性磁电阻。除了大的、场线性磁电阻外,样品在低温下还表现出明显的SdH量子振荡。对SdH数据的分析表明,高迁移率的体电子载流子主导磁输运,并导致在Y Pd Bi 晶体中观察到的大线性磁电阻。这些发现意味着基于赫斯勒的拓扑绝缘体在研究新型量子输运特性和开发潜在应用方面具有优势。

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