INESC MN, Rua Alves Redol 9, 1000-029, Lisbon, Portugal.
IPFN, Instituto Superior Técnico, University of Lisbon, Av. Rovisco Pais 1, 1049-001, Lisbon, Portugal.
Sci Rep. 2023 Mar 25;13(1):4882. doi: 10.1038/s41598-023-31824-0.
Ion-beam-induced luminescence (IBIL) measurements were performed in Cr-doped β-GaO using both protons and helium ions, showing a strong enhancement of the Cr luminescence upon ion irradiation. Theoretical modelling of the IBIL intensity curves as a function of the fluence allowed estimating the effective cross-sections associated with the defect-induced IBIL enhancement and quenching processes. The results suggest that sensitizing the Cr luminescence is more efficient for H than for He irradiation. Thermoluminescence (TL) studies were performed in the pristine sample, with no TL signal being observed in the spectral region corresponding to the Cr emission. In agreement with the IBIL study, upon ion irradiation (with either protons or helium ions), this TL emission is activated. Moreover, it can be quenched by annealing at 923 K for 10 s, thus revealing the role played by the defects induced by the irradiation. These results show that the irradiation-induced defects play a major role in the activation of the Cr luminescence, a fact that can be exploited for radiation sensing and dosimetry.
采用质子和氦离子对掺铬β-GaO 进行了离子束诱导发光 (IBIL) 测量，结果表明，离子辐照会显著增强 Cr 发光。作为辐照剂量函数的 IBIL 强度曲线的理论建模，允许估计与缺陷诱导的 IBIL 增强和猝灭过程相关的有效截面。结果表明，与 He 辐照相比，H 辐照更有利于敏化 Cr 发光。在原始样品中进行了热释光 (TL) 研究，在对应于 Cr 发射的光谱区域没有观察到 TL 信号。与 IBIL 研究一致，在离子辐照（质子或氦离子）后，这种 TL 发射被激活。此外，它可以通过在 923 K 下退火 10 s 来猝灭，从而揭示了辐照诱导缺陷所起的作用。这些结果表明，辐照诱导的缺陷在 Cr 发光的激活中起着主要作用，这一事实可用于辐射感应和剂量测定。
