Yang Xue, Zhou Xi, Li Lei, Wang Ning, Hao Rui, Zhou Yanan, Xu Hua, Li Yingtao, Zhu Guangming, Zhang Zemin, Wang Junru, Feng Qingliang
College of Chemistry & Pharmacy, Northwest A&F University, 22 Xinong Road, Yangling, Shaanxi, 712100, China.
Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China.
Small. 2023 Jul;19(28):e2206590. doi: 10.1002/smll.202206590. Epub 2023 Mar 28.
High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared-guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional photodetectors show dramatic carrier mobility decreases and carrier losses with low photoresponsivity at HOT due to the increased carrier scattering in channels at high temperatures. Herein, the HOT broadband photodetectors from room temperature to 470 K are developed for the first time by large-area black phosphorus (BP)/PtSe films device arrays via a depletion-enhanced photocarrier dynamics strategy. Attributed to the 2D Schottky junction at BP/PtSe interface and resulting in full depleted working channels, the BP/PtSe photodetector arrays exhibit high tolerance to carrier mobility decrease during the increasing operating temperature in a wide wavelength range from 532 to 2200 nm. Thus, the photodetector shows a state-of-the-art operating temperature at 470 K with the photo-responsivity (R) and specific detectivity (D*) of 25 A W and 6.4 × 10 Jones under 1850 nm illumination, respectively. Moreover, BP/PtSe photodetector arrays show high-uniformity photo-response in a large area. This work provides new strategies for high-performance broadband photodetector arrays with HOT by Schottky junction of large-area BP/PtSe films.
高温宽带光电探测器对于红外制导导弹、红外夜视、消防安全成像和太空探索传感等极端条件应用来说是迫切需要的。然而，传统光电探测器在高温下由于沟道中载流子散射增加，表现出显著的载流子迁移率下降和载流子损失，且光响应率较低。在此，首次通过大面积黑磷（BP）/PtSe薄膜器件阵列，采用耗尽增强光载流子动力学策略，开发出了从室温到470K的高温宽带光电探测器。由于BP/PtSe界面处的二维肖特基结以及由此产生的完全耗尽工作沟道，BP/PtSe光电探测器阵列在532至2200nm的宽波长范围内，随着工作温度升高，对载流子迁移率下降具有高耐受性。因此，该光电探测器在470K时表现出最先进的工作温度，在1850nm光照下，光响应率（R）和比探测率（D*）分别为25 A/W和6.4×10 Jones。此外，BP/PtSe光电探测器阵列在大面积上表现出高均匀性的光响应。这项工作通过大面积BP/PtSe薄膜的肖特基结为高性能高温宽带光电探测器阵列提供了新策略。
