Zhu Qinghai, Wei Shiyu, Sun Jiabao, Sun Yijun, Xu Mingsheng
College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
College of Information Science & Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China.
Nanoscale. 2024 Oct 31;16(42):19865-19872. doi: 10.1039/d4nr03150d.
Silicon materials are irreplaceable in the modern information society because of their rich resource, low price, and mature manufacturing technology for optoelectronics. However, improving the responsivity and response speed of silicon-based photodetectors is still a challenge. Here, a double-heterojunction photodetector (PD) by coupling two-dimensional PtSe thin film with a graphene/silicon Schottky junction is proposed. The introduction of PtSe enhances the built-in electric field of the device, thus suppressing the dark-state current and promoting the separation of photogenerated electron-hole pairs. Under 808 nm laser illumination, the PtSe/graphene/Si PD exhibits an optimal responsivity, specific detectivity, and response speed of 0.81 A W, 1.24 × 10 Jones, and 43.6/51.2 μs, respectively. These performance indexes are obviously better than the corresponding graphene/Si device. Furthermore, the PtSe/graphene/Si PD has good environmental durability and photoresponse ability from the ultraviolet to near-infrared. This work will provide new possibilities for designing novel silicon-based photodetection devices with high performance and fast response.
由于硅材料资源丰富、价格低廉且光电子制造技术成熟，在现代信息社会中具有不可替代的地位。然而，提高硅基光电探测器的响应度和响应速度仍然是一项挑战。在此，提出了一种通过将二维PtSe薄膜与石墨烯/硅肖特基结耦合的双异质结光电探测器（PD）。PtSe的引入增强了器件的内建电场，从而抑制了暗态电流并促进了光生电子-空穴对的分离。在808 nm激光照射下，PtSe/石墨烯/硅PD分别表现出0.81 A W的最佳响应度、1.24×10琼斯的比探测率和43.6/51.2 μs的响应速度。这些性能指标明显优于相应的石墨烯/硅器件。此外，PtSe/石墨烯/硅PD具有良好的环境耐久性以及从紫外到近红外的光响应能力。这项工作将为设计高性能、快速响应的新型硅基光探测器件提供新的可能性。
