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大面积4H-SiC肖特基势垒二极管的辐射响应

Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes.

作者信息

Bernat Robert, Knežević Tihomir, Radulović Vladimir, Snoj Luka, Makino Takahiro, Ohshima Takeshi, Capan Ivana

机构信息

Ruđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, Croatia.

Jožef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana, Slovenia.

出版信息

Materials (Basel). 2023 Mar 9;16(6):2202. doi: 10.3390/ma16062202.

Abstract

We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation response to ionizing particles. Two different diode areas were compared: 1 mm × 1 mm and 5 mm × 5 mm. LiF and BC films, which were placed on top of the diodes, were used as thermal neutron converters. We achieved a thermal neutron efficiency of 5.02% with a LiF thermal neutron converter, which is one of the highest efficiencies reported to date. In addition, a temperature-dependent radiation response to alpha particles was presented. Neutron irradiations were performed in a JSI TRIGA dry chamber and an Am-241 wide-area alpha source was used for testing the alpha response of the 4H-SiC Schottky barrier diodes.

摘要

我们报告了大面积4H-SiC肖特基势垒二极管对电离粒子辐射响应的影响。比较了两种不同的二极管面积:1毫米×1毫米和5毫米×5毫米。置于二极管顶部的LiF和BC薄膜用作热中子转换器。使用LiF热中子转换器时,我们实现了5.02%的热中子效率,这是迄今为止报道的最高效率之一。此外,还给出了对α粒子的温度依赖性辐射响应。在JSI TRIGA干燥室中进行中子辐照,并使用Am-241大面积α源测试4H-SiC肖特基势垒二极管的α响应。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9ad4/10051566/1fe13a89f8f6/materials-16-02202-g001.jpg

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