Elsayed Asmaa M, Alkallas Fatemah H, Ben Gouider Trabelsi Amira, AlFaify Salem, Shkir Mohd, Alrebdi Tahani A, Almugren Kholoud S, Kusmatsev Feodor V, Rabia Mohamed
Nanophotonics and Applications Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt.
TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt.
Micromachines (Basel). 2023 Mar 6;14(3):606. doi: 10.3390/mi14030606.
A graphene oxide (GO)/poly 3-methyl aniline (P3MA) photodetector has been developed for light detection in a broad optical region: UV, Vis, and IR. The 3-methyl aniline was initially synthesized via radical polymerization using an acid medium, i.e., KSO oxidant. Consequently, the GO/P3MA composite was obtained through the adsorption of GO into the surface of P3MA. The chemical structure and optical properties of the prepared materials have been illustrated via XRD, FTIR, SEM, and TEM analysis. The absorbance measurements demonstrate good optical properties in the UV, Vis, and near-IR regions, although a decrease in the bandgap from 2.4 to 1.6 eV after the composite formation was located. The current density (J) varies between 0.29 and 0.68 mA·cm (at 2.0 V) under dark and light, respectively. The photodetector has been tested using on/off chopped light at a low potential, in which the produced J values decrease from 0.14 to 0.04 µA·cm, respectively. The GO/P3MA photodetector exhibits excellent R (and D) values of 4 and 2.7 mA·W (0.90 × 10 and 0.60 × 10 Jones) in the UV (340 nm) and IR (730 nm) regions, respectively. The R and D values obtained here make the prepared photodetector a promising candidate for future light detection instruments.
已开发出一种氧化石墨烯（GO）/聚3-甲基苯胺（P3MA）光电探测器，用于在广泛的光学区域（紫外、可见光和红外）进行光检测。3-甲基苯胺最初是通过在酸性介质（即KSO氧化剂）中进行自由基聚合反应合成的。随后，通过将GO吸附到P3MA表面获得了GO/P3MA复合材料。通过XRD、FTIR、SEM和TEM分析对所制备材料的化学结构和光学性质进行了说明。吸光度测量表明，该材料在紫外、可见光和近红外区域具有良好的光学性质，不过在复合材料形成后，带隙从2.4 eV降至1.6 eV。在黑暗和光照条件下，电流密度（J）分别在0.29至0.68 mA·cm（在2.0 V时）之间变化。该光电探测器已在低电位下使用开/关斩波光进行测试，其中产生的J值分别从0.14降至0.04 µA·cm。GO/P3MA光电探测器在紫外（340 nm）和红外（730 nm）区域分别表现出优异的响应率（R）和探测率（D）值，分别为4和2.7 mA·W（0.90×10和0.60×10琼斯）。此处获得的R和D值使所制备的光电探测器成为未来光检测仪器的一个有前景的候选者。
