Chemical Dopant-Free Controlled MoTe/MoSe Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits.

Two-dimensional (2D) van der Waals heterostructures based on transition metal dichalcogenides are expected to be unique building blocks for next-generation nanoscale electronics and optoelectronics. The ability to control the properties of 2D heterostructures is the key for practical applications. Here, we report a simple way to fabricate a high-performance self-driven photodetector based on the MoTe/MoSe p-n heterojunction, in which the hole-dominated transport polarity of MoTe is easily achieved via a straightforward thermal annealing treatment in air without any chemical dopants or special gases needed. A high photoresponsivity of 0.72 A W, an external quantum efficiency up to 41.3%, a detectivity of 7 × 10 Jones, and a response speed of 120 μs are obtained at zero bias voltage. Additionally, this doping method is also utilized to realize a complementary inverter with a voltage gain of 24. By configuring 2D p-MoTe and n-MoSe on demand, logic functions of NAND and NOR gates are also accomplished successfully. These results present a significant potential toward future larger-scale heterogeneously integrated 2D electronics and optoelectronics.