State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
National Integrated Circuit Innovation Center, No. 825 Zhangheng Road, Shanghai 201203, China.
ACS Appl Mater Interfaces. 2023 Apr 12;15(14):18182-18190. doi: 10.1021/acsami.2c21785. Epub 2023 Mar 29.
Two-dimensional (2D) van der Waals heterostructures based on transition metal dichalcogenides are expected to be unique building blocks for next-generation nanoscale electronics and optoelectronics. The ability to control the properties of 2D heterostructures is the key for practical applications. Here, we report a simple way to fabricate a high-performance self-driven photodetector based on the MoTe/MoSe p-n heterojunction, in which the hole-dominated transport polarity of MoTe is easily achieved via a straightforward thermal annealing treatment in air without any chemical dopants or special gases needed. A high photoresponsivity of 0.72 A W, an external quantum efficiency up to 41.3%, a detectivity of 7 × 10 Jones, and a response speed of 120 μs are obtained at zero bias voltage. Additionally, this doping method is also utilized to realize a complementary inverter with a voltage gain of 24. By configuring 2D p-MoTe and n-MoSe on demand, logic functions of NAND and NOR gates are also accomplished successfully. These results present a significant potential toward future larger-scale heterogeneously integrated 2D electronics and optoelectronics.
基于过渡金属二卤化物的二维（2D）范德华异质结有望成为下一代纳米电子学和光电子学的独特构建模块。控制 2D 异质结性能是实际应用的关键。在这里，我们报告了一种简单的方法，通过在空气中进行简单的热退火处理，无需任何化学掺杂剂或特殊气体，即可轻松实现 MoTe/MoSe p-n 异质结的高性能自驱动光电探测器。在零偏置电压下，获得了 0.72 A W 的高光响应率、高达 41.3%的外量子效率、7×10 的琼斯探测率和 120 μs 的响应速度。此外，这种掺杂方法还用于实现具有 24 倍电压增益的互补逆变器。通过按需配置 2D p-MoTe 和 n-MoSe，还成功实现了 NAND 和 NOR 门的逻辑功能。这些结果为未来更大规模的异质集成 2D 电子学和光电子学提供了重要的潜力。
