Chen Shao-Bo, Guo San-Dong, Yan Wan-Jun, Zeng Zhao-Yi, Xu Mei, Chen Xiang-Rong, Geng Hua-Yun
College of Electronic and Information Engineering, Anshun University, Anshun 561000, People's Republic of China.
College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China.
Phys Chem Chem Phys. 2023 Apr 12;25(15):10827-10835. doi: 10.1039/d2cp05161c.
In this paper, the electronic band structure, Rashba effect, hexagonal warping, and piezoelectricity of Janus group-VIA binary monolayers STe, SeTe, and SeTe are investigated based on density functional theory (DFT). Due to the inversion asymmetry and spin-orbit coupling (SOC), the STe, SeTe and SeTe monolayers exhibit large intrinsic Rashba spin splitting (RSS) at the point with the Rashba parameters 0.19 eV Å, 0.39 eV Å, and 0.34 eV Å, respectively. Interestingly, based on the · model symmetry analysis, the hexagonal warping effect and a nonzero spin projection component S arise at a larger constant energy surface due to nonlinear terms. Then, the warping strength was obtained by fitting the calculated energy band data. Additionally, in-plane biaxial strain can significantly modulate the band structure and RSS. Furthermore, all these systems exhibit large in-plane and out-of-plane piezoelectricity due to inversion and mirror asymmetry. The calculated piezoelectric coefficients and are about 15-40 pm V and 0.2-0.4 pm V, respectively, which are superior to those of most reported Janus monolayers. Because of the large RSS and piezoelectricity, the studied materials have great potential for spintronic and piezoelectric applications.
在本文中,基于密度泛函理论(DFT)研究了Janus VIA族二元单层STe、SeTe和TeSe的电子能带结构、Rashba效应、六角翘曲和压电性。由于反演不对称性和自旋轨道耦合(SOC),STe、SeTe和TeSe单层在Γ点表现出较大的固有Rashba自旋分裂(RSS),其Rashba参数分别为0.19 eV Å、0.39 eV Å和0.34 eV Å。有趣的是,基于k·p模型对称性分析,由于非线性项,六角翘曲效应和非零自旋投影分量Sz出现在更大的常能面上。然后,通过拟合计算得到的能带数据获得翘曲强度。此外,面内双轴应变可以显著调制能带结构和RSS。此外,由于反演和镜像不对称,所有这些体系都表现出较大的面内和面外压电性。计算得到的压电系数e15和e33分别约为15 - 40 pm V和0.2 - 0.4 pm V,优于大多数已报道的Janus单层。由于较大的RSS和压电性,所研究的材料在自旋电子学和压电应用方面具有巨大潜力。