Rincent Camille, Castillo-Sánchez Juan-Ricardo, Gheribi Aïmen E, Harvey Jean-Philippe
CRCT - Polytechnique Montreal, Box 6079, Station Downtown, Montreal, QC, Canada.
Phys Chem Chem Phys. 2023 Apr 12;25(15):10866-10884. doi: 10.1039/d3cp00912b.
Classical molecular dynamics simulations of metallic systems have been extensively applied in recent years for the exploration of the energetic behavior of mesoscale structures and for the generation of thermodynamic and physical properties. The evaluation of the conditions leading to the melting of pure metals and alloys is particularly challenging as it involves at one point the simultaneous presence of both a solid and a liquid phase. Defects such as vacancies, dislocation, grain boundaries and pores typically promote the melting of a solid by locally increasing its free energy which favors the destruction of long-range ordering at the origin of this phase transition. In real materials, many of these defects are microscopic and cannot yet be modelled conventional atomistic simulations. Still, molecular dynamics-based methodologies are commonly used to estimate the melting temperature of solids. These methods involve the use of mesoscale supercells with various nanoscale defects. Moreover, the deterministic nature of classical MD simulations requires the adequate selection of the initial configuration to be melted. In this context, the main objective of this paper is to quantify the precision of the existing classical molecular dynamics computational methods used to evaluate the melting point of pure compounds as well as the solidus/liquidus lines of Al-based binary metallic systems. We also aim to improve the methodology of different approaches such as the void method, the interface method as well as the grain method to obtain a precise evaluation of the melting behavior of pure metals and alloys. We carefully analyzed the importance of the local chemical ordering on the melting behavior. The ins and outs of different numerical methods in predicting the melting temperature MD are discussed through several examples related to pure metallic elements, congruently and non-congruently melting compounds as well as binary solid solutions. It is shown that the defect distribution of the initial supercell configuration plays an important role upon the description of the melting mechanism of solids leading to a poor predictive capability of melting temperature if not properly controlled. A new methodology based on defect distribution within the initial configuration is proposed to overcome these limitations.
近年来,金属系统的经典分子动力学模拟已被广泛应用于探索中尺度结构的能量行为以及生成热力学和物理性质。评估导致纯金属和合金熔化的条件极具挑战性,因为这在某一时刻涉及固相和液相的同时存在。诸如空位、位错、晶界和孔隙等缺陷通常通过局部增加其自由能来促进固体的熔化,这有利于破坏该相变起源处的长程序。在实际材料中,许多这些缺陷是微观的,尚无法用传统的原子模拟进行建模。尽管如此,基于分子动力学的方法通常用于估计固体的熔化温度。这些方法涉及使用具有各种纳米级缺陷的中尺度超级单元。此外,经典分子动力学模拟的确定性性质要求对要熔化的初始构型进行适当选择。在此背景下,本文的主要目标是量化用于评估纯化合物熔点以及铝基二元金属系统固相线/液相线的现有经典分子动力学计算方法的精度。我们还旨在改进不同方法的方法论,如空位法、界面法以及晶粒法,以精确评估纯金属和合金的熔化行为。我们仔细分析了局部化学有序对熔化行为的重要性。通过几个与纯金属元素、一致和不一致熔化化合物以及二元固溶体相关的例子,讨论了不同数值方法在预测分子动力学熔化温度方面的来龙去脉。结果表明,初始超级单元构型的缺陷分布在描述固体熔化机制时起着重要作用,如果控制不当,会导致熔化温度的预测能力较差。为克服这些限制,提出了一种基于初始构型内缺陷分布的新方法。