GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, People's Republic of China.
Key Lab of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications, Ministry of Education), People's Republic of China.
Nanotechnology. 2023 May 2;34(28). doi: 10.1088/1361-6528/acca89.
Silicon-based gallium nitride lasers are considered potential laser sources for on-chip integration. However, the capability of on-demand lasing output with its reversible and wavelength tunability remains important. Herein, a Benz-shaped GaN cavity is designed and fabricated on a Si substrate and coupled to a Ni metal wire. Under optical pumping, excitation position-related lasing and exciton combination properties of pure GaN cavity are studied systematically. Under electrically driven, joule thermal of Ni metal wire makes it easy to change the temperature of the cavity. And then, we demonstrate a joule heat-induced contactless lasing mode manipulation in the coupled GaN cavity. The driven current, coupling distance, and excitation position influence the wavelength tunable effect. Compared with other positions, the outer ring position has the highest lasing properties and lasing mode tuning abilities. The optimized structures demonstrate clear wavelength tuning and an even mode switch. The thermal reduction of the band gap is identified to account for the modification of the lasing profile, but the thermo-optic effect is non-negligible under a high-driven current.
基于硅的氮化镓激光器被认为是芯片集成的潜在激光光源。然而，其按需激光输出的能力及其可重复性和波长可调谐性仍然很重要。在此，我们在 Si 衬底上设计和制造了一个苯形 GaN 腔，并将其与 Ni 金属丝耦合。在光泵浦下，我们系统地研究了纯 GaN 腔的激发位置相关激光和激子复合特性。在电驱动下，Ni 金属丝的焦耳热很容易改变腔的温度。然后，我们在耦合 GaN 腔中演示了一种焦耳热诱导的无接触激光模式操控。驱动电流、耦合距离和激发位置影响波长可调谐效应。与其他位置相比，外环位置具有最高的激光特性和激光模式调谐能力。优化结构显示出清晰的波长调谐和均匀模式切换。带隙的热减小被认为是激光轮廓修改的原因，但在高驱动电流下，热光效应不可忽略。
