Pan Saihu, Hu Suhao, Wei Bin
School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, China.
Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China.
Nanomaterials (Basel). 2023 Apr 5;13(7):1282. doi: 10.3390/nano13071282.
We have studied high light out-coupling efficiency top-emitting organic light-emitting diodes (TOLEDs) under the guidance of the finite-difference time-domain (FDTD) simulation. TOLED achieves an extraordinarily high light extraction efficiency at 468 nm, in deep-blue regions, of 49.70%, which is approximately 3.5 times that of the bottom light-emitting diode (BOLED) by changing the thickness of the organic layer and the position of the light-emitting layer in the FDTD simulation. Based on the simulation results, the TOLED with ultrahigh efficiency and narrow full width at half maximum is successfully fabricated, and the maximum external quantum efficiency of TOLED is almost 3.3 times that of the BOLED, which is perfectly consistent with the FDTD simulation results. Meanwhile, the shift of the electroluminescence spectrum of the TOLED is restricted within 10° in the angular-dependence test (0° to 80°). The optimized performance of the OLED indicates a new method to develop a high-performance device under the guidance of simulation.
我们在时域有限差分（FDTD）模拟的指导下研究了高光出耦合效率的顶部发光有机发光二极管（TOLED）。通过在FDTD模拟中改变有机层的厚度和发光层的位置，TOLED在468nm的深蓝色区域实现了49.70%的超高光提取效率，约为底部发光二极管（BOLED）的3.5倍。基于模拟结果，成功制备了具有超高效率和半高宽较窄的TOLED，其最大外量子效率几乎是BOLED的3.3倍，这与FDTD模拟结果完全一致。同时，在角度依赖性测试（0°至80°）中，TOLED的电致发光光谱的偏移被限制在10°以内。OLED的优化性能表明了一种在模拟指导下开发高性能器件的新方法。
