Center for Sensors and Devices, Fondazione Bruno Kessler, 38123 Trento, Italy.
Sensors (Basel). 2023 Mar 23;23(7):3380. doi: 10.3390/s23073380.
The emerging paradigms of Beyond-5G (B5G), 6G and Future Networks (FN), will capsize the current design strategies, leveraging new technologies and unprecedented solutions. Focusing on the telecom segment and on low-complexity Hardware (HW) components, this contribution identifies RF-MEMS, i.e., Radio Frequency (RF) passives in Microsystem (MEMS) technology, as a key-enabler of 6G/FN. This work introduces four design concepts of RF-MEMS series ohmic switches realized in a surface micromachining process. S-parameters (Scattering parameters) are measured and simulated with a Finite Element Method (FEM) tool, in the frequency range from 100 MHz to 110 GHz. Based on such a set of data, three main aspects are covered. First, validation of the FEM-based modelling methodology is carried out. Then, pros and cons in terms of RF characteristics for each design concept are identified and discussed, in view of B5G, 6G and FN applications. Moreover, ad hoc metrics are introduced to better quantify the S-parameters predictive errors of simulated vs. measured data. In particular, the latter items will be further exploited in the second part of this work (to be submitted later), in which a discussion around compact modelling techniques applied to RF-MEMS switching concepts will also be included.
超越 5G（B5G）、6G 和未来网络（FN）的新兴范例将颠覆当前的设计策略，利用新技术和前所未有的解决方案。本研究聚焦于电信领域和低复杂度硬件（HW）组件，确定 RF-MEMS（微机电系统（MEMS）技术中的射频无源器件）为 6G/FN 的关键使能技术。本工作介绍了在表面微加工工艺中实现的四种 RF-MEMS 串联欧姆开关的设计概念。使用有限元方法（FEM）工具对 S 参数（散射参数）进行了测量和模拟，频率范围为 100MHz 至 110GHz。基于这组数据，涵盖了三个主要方面。首先，对基于 FEM 的建模方法进行了验证。然后，针对 B5G、6G 和 FN 应用，针对每种设计概念的射频特性的优缺点进行了识别和讨论。此外，还引入了特定指标，以更好地量化模拟与测量数据的 S 参数预测误差。特别是，后者将在本工作的第二部分（稍后提交）中进一步利用，其中还将包括对应用于 RF-MEMS 开关概念的紧凑建模技术的讨论。
