Iannacci Jacopo, Resta Giuseppe, Bagolini Alvise, Giacomozzi Flavio, Bochkova Elena, Savin Evgeny, Kirtaev Roman, Tsarkov Alexey, Donelli Massimo
Center for Materials and Microsystems (CMM), Fondazione Bruno Kessler (FBK), Via Sommarive, 18-38123 Trento, Italy.
Bazovye Tekhnologii, LLC, 125124 Moscow, Russia.
Sensors (Basel). 2020 May 3;20(9):2612. doi: 10.3390/s20092612.
RF-MEMS, i.e., Micro-Electro-Mechanical Systems (MEMS) for Radio Frequency (RF) passive components, exhibit interesting characteristics for the upcoming 5G and Internet of Things (IoT) scenarios, in which reconfigurable broadband and frequency-agile devices, like high-order switching units, tunable filters, multi-state attenuators, and phase shifters will be necessary to enable mm-Wave services, small cells, and advanced beamforming. In particular, satellite communication systems providing high-speed Internet connectivity utilize the K and Ka bands, which offer larger bandwidth compared to lower frequencies. This paper focuses on two design concepts of multi-state phase shifter designed and manufactured in RF-MEMS technology. The networks feature 4 switchable stages (16 states) and are developed for the K and Ka bands. The proposed phase shifters are realized in a surface micromachining RF-MEMS technology and the experimentally measured parameters are compared with Finite Element Method (FEM) multi-physical electromechanical and RF simulations. The simulated phase shifts at both the operating bands fit well the measured value, despite the measured losses (S21) are larger than 5-7 dB if compared to simulations. However, such a non-ideality has a technological motivation that is explained in the paper and that will be fixed in the manufacturing of future devices.
射频微机电系统,即用于射频(RF)无源元件的微机电系统(MEMS),在即将到来的5G和物联网(IoT)场景中展现出有趣的特性,在这些场景中,诸如高阶开关单元、可调滤波器、多态衰减器和移相器等可重构宽带和频率捷变设备对于实现毫米波服务、小基站和先进波束赋形将是必不可少的。特别是,提供高速互联网连接的卫星通信系统利用K波段和Ka波段,与较低频率相比,它们提供更大的带宽。本文重点关注采用射频微机电系统技术设计和制造的多态移相器的两种设计概念。这些网络具有4个可切换阶段(16种状态),并针对K波段和Ka波段开发。所提出的移相器采用表面微加工射频微机电系统技术实现,并将实验测量参数与有限元方法(FEM)多物理机电和射频模拟进行比较。尽管与模拟相比,测量损耗(S21)大于5 - 7 dB,但在两个工作频段的模拟相移与测量值拟合良好。然而,这种非理想性有其技术原因,本文对此进行了解释,并且在未来器件的制造中将予以解决。