Opt Lett. 2023 Apr 15;48(8):2094-2097. doi: 10.1364/OL.485551.
High harmonic generation (HHG) in monolayer MoS is studied using fully microscopic many-body models based on the semiconductor Bloch equations and density functional theory. It is shown that Coulomb correlations lead to a dramatic enhancement of HHG. In particular, near the bandgap, enhancements of two orders of magnitude or more are observed for a wide range of excitation wavelengths and intensities. For excitation at excitonic resonances, strong absorption leads to spectrally broad sub-floors of the harmonics that is absent without Coulomb interaction. The widths of these sub-floors depend strongly on the dephasing time for polarizations. For times of the order of 10 fs the broadenings are comparable to the Rabi energies and reach one electronvolt at fields of approximately 50 MV/cm. The intensities of these contributions are approximately four to six orders below the peaks of the harmonics.
利用基于半导体布洛赫方程和密度泛函理论的全微观多体模型研究了单层 MoS 中的高次谐波产生 (HHG)。结果表明,库仑相关导致 HHG 显著增强。特别是,在带隙附近,对于广泛的激发波长和强度,观察到两个数量级或更多的增强。对于激子共振激发,强烈的吸收导致谐波的谱宽亚层,而没有库仑相互作用则不存在。这些亚层的宽度强烈依赖于极化的退相时间。对于大约 10 fs 的时间,展宽与拉比能相当,在大约 50 MV/cm 的场强下达到 1 eV。这些贡献的强度大约比谐波峰值低四到六个数量级。