Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10617, Taiwan.
Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 24301, Taiwan.
ACS Appl Mater Interfaces. 2023 May 3;15(17):21284-21295. doi: 10.1021/acsami.3c00839. Epub 2023 Apr 20.
Hybrid organic-inorganic metal halide perovskites (HOIP) have become a promising visible light sensing material due to their excellent optoelectronic characteristics. Despite the superiority, overcoming the stability issue for commercialization remains a challenge. Herein, an extremely stable photodetector was demonstrated and fabricated with CsFAPb(IBr) perovskite by an all-vacuum process. The photodetector achieves a current density up to 1.793 × 10 A cm under standard one sun solar illumination while maintaining a current density as low as 8.627 × 10 A cm at zero bias voltage. The linear dynamic range (LDR) and transient voltage response were found to be comparable to the silicon-based photodetector (Newport 818-SL). Most importantly, the device maintains 95% of the initial performance after 960 h of incessant exposure under one sun solar illumination. The achievements of these outstanding results contributed to the all-vacuum deposition process delivering a film with high stability and good uniformity, which in turn delays the degradation process. The degradation mechanism is further investigated by impedance spectroscopy to reveal the charge dynamics in the photodetector under different exposure times.
混合有机-无机卤化物钙钛矿（HOIP）由于其优异的光电特性，已成为一种很有前途的可见光传感材料。尽管具有优越性，但克服稳定性问题以实现商业化仍然是一个挑战。在此，通过全真空工艺展示并制造了具有 CsFAPb(IBr) 钙钛矿的极稳定光电探测器。该光电探测器在标准单阳光照下实现了高达 1.793×10^-3 A/cm^2 的电流密度，而在零偏压下电流密度低至 8.627×10^-3 A/cm^2。发现线性动态范围（LDR）和瞬态电压响应可与基于硅的光电探测器（Newport 818-SL）相媲美。最重要的是，该器件在单阳光照下连续暴露 960 小时后，仍保持初始性能的 95%。这些出色结果的取得归因于全真空沉积工艺提供了具有高稳定性和良好均匀性的薄膜，从而延缓了降解过程。通过阻抗谱进一步研究了降解机制，以揭示不同暴露时间下光电探测器中的电荷动力学。
