National Engineering Research Center of Novel Equipment for Polymer Processing, South China University of Technology, Guangzhou, 510640, P. R. China.
Key Laboratory of Polymer Processing Engineering, Ministry of Education, South China University of Technology, Guangzhou, 510640, P. R. China.
Macromol Rapid Commun. 2023 Aug;44(15):e2300136. doi: 10.1002/marc.202300136. Epub 2023 May 6.
In order to enhance the thermal conductivity of polytetrafluoroethylene (PTFE)-based composites, while maintaining relatively low dielectric constant and dielectric loss for high-frequency and high-speed applications, hexagonal boron nitride (hBN) and silicon carbide (SiC) compounded fillers are filled into the PTFE matrix. The hBN/SiC/PTFE composites are prepared by pulse vibration molding (PVM), and their subsequent thermal conductivities are comparatively investigated. The PVM process with controlled fluctuation in pressure (1 Hz square wave force, 0-20 MPa, at 150 °C) can reduce the sample porosity and surface defects, improve the orientation of hBN, and increase the thermal conductivity by 44.6% compared with that obtained by compression molding. When hBN:SiC (vol) is 3:1, the in-plane thermal conductivity of the composite with 40 vol% filler content is ≈4.83 W m K , which is 40.3% higher than that of hBN/PTFE. Regarding the dielectric properties, hBN/SiC/PTFE maintains a low dielectric constant of 3.27 and a low dielectric loss of 0.0058. The dielectric constants of hBN/SiC/PTFE ternary composites are predicted by using different prediction models, among which the effective medium theory (EMT), is in good agreement with the experimental results. PVM shows great potential in the large-scale preparation of thermal conductive composites for high-frequency and high-speed applications.
为了提高聚四氟乙烯(PTFE)基复合材料的热导率,同时保持较低的介电常数和介电损耗,以满足高频高速应用的要求,将六方氮化硼(hBN)和碳化硅(SiC)复合填料填充到 PTFE 基体中。采用脉冲振动成型(PVM)制备 hBN/SiC/PTFE 复合材料,并对其随后的热导率进行比较研究。采用压力可控波动的 PVM 工艺(1 Hz 方波力,0-20 MPa,150°C)可以降低样品的孔隙率和表面缺陷,改善 hBN 的取向,使热导率提高 44.6%,比压缩成型得到的样品提高了 44.6%。当 hBN:SiC(体积比)为 3:1 时,填充量为 40 体积%的复合材料的面内热导率约为 4.83 W m K ,比 hBN/PTFE 提高了 40.3%。在介电性能方面,hBN/SiC/PTFE 保持了较低的介电常数 3.27 和较低的介电损耗 0.0058。通过不同的预测模型对 hBN/SiC/PTFE 三元复合材料的介电常数进行预测,其中有效介质理论(EMT)与实验结果吻合较好。PVM 在高频高速应用的导热复合材料的大规模制备方面具有很大的潜力。