Yadav Sachin Kumar, Kumar Amit, Mehta N
Department of Physics, Banaras Hindu University Varanasi 221005 India
Sunbeam College for Women Bhagwanpur Varanasi 221005 India.
RSC Adv. 2023 May 3;13(20):13564-13574. doi: 10.1039/d3ra01199b. eCollection 2023 May 2.
In this work, we explore various properties of elemental selenium glass (g-Se) by doping with graphene through the facile melt-quench technique. The structural information of the synthesized sample was found by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy. The analyses confirm that the graphene-doped g-Se behaves like a glass-ceramic material. Electrical and dielectric measurements were performed to discover the consequences of graphene incorporation on the nano-structure of g-Se. The electrical measurements of the dielectric parameters (, dielectric constant ' and loss '') and conductivity ( ) reveal that graphene incorporation causes a rise in the dielectric constant but simultaneously increases dielectric loss. The enhancement in ' and '' values is thought to be a consequence of the interface effect between graphene and the host selenium glass. Calorimetric experiments were performed in a standard differential scanning calorimetry (DSC) unit on the glassy nanocomposite in non-isothermal mode. By measuring the kinetic temperatures at four heating rates, the kinetics of the crystallization/glass transition were studied. The results were examined to understand the role of graphene doping on the well-known phase transitions (, glass transition and crystallization) of g-Se.
在这项工作中,我们通过简便的熔体淬火技术用石墨烯掺杂来探索元素硒玻璃(g-Se)的各种性质。通过X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)和拉曼光谱来获取合成样品的结构信息。分析证实,石墨烯掺杂的g-Se表现得像一种玻璃陶瓷材料。进行电学和介电测量以发现石墨烯掺入对g-Se纳米结构的影响。对介电参数(介电常数ε、损耗正切tanδ)和电导率(σ)的电学测量表明,石墨烯的掺入导致介电常数升高,但同时增加了介电损耗。ε和tanδ值的增加被认为是石墨烯与主体硒玻璃之间界面效应的结果。在标准差示扫描量热法(DSC)装置中以非等温模式对玻璃态纳米复合材料进行量热实验。通过测量四种加热速率下的动力学温度,研究了结晶/玻璃化转变的动力学。对结果进行了考察,以了解石墨烯掺杂对g-Se著名的相变(即玻璃化转变和结晶)的作用。