Opt Express. 2023 Apr 24;31(9):13798-13805. doi: 10.1364/OE.485424.
This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOS-DMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well available in BCD is utilized to implement the avalanche multiplication region. The resulting SPAD has a breakdown voltage of 18.4 V while achieving an excellent dark count rate of 4.4 cps/µm at the excess bias voltage of 7 V in spite of the advanced technology node. At the same time, the device achieves a high peak photon detection probability (PDP) of 70.1% at 450 nm thanks to the high and uniform E-field. Its PDP values at 850 and 940 nm, wavelengths of interest for 3D ranging applications reach 7.2 and 3.1%, respectively, with the use of deep N-well. The timing jitter of the SPAD, full width at half maximum (FWHM), is 91 ps at 850 nm. It is expected that the presented SPAD enables cost-effective time-of-flight and LiDAR sensors with the advanced standard technology for many mobile applications.
本文提出了一种在 55nm 双极 CMOS 双扩散金属氧化物半导体（BCD）工艺中的单光子雪崩二极管（SPAD）。为了实现适用于移动应用的击穿电压低于 20V 的 SPAD，同时防止高隧穿噪声，利用 BCD 中的高压 N 阱来实现雪崩倍增区域。尽管采用了先进的技术节点，但该 SPAD 的击穿电压为 18.4V，同时在 7V 的过剩偏置电压下实现了出色的暗计数率 4.4cps/μm。同时，由于高且均匀的 E 场，该器件在 450nm 处实现了 70.1%的高峰值光子探测概率（PDP）。对于 3D 测距应用感兴趣的 850nm 和 940nm 波长，其 PDP 值分别达到 7.2%和 3.1%，这要归功于深 N 阱的使用。SPAD 的定时抖动（FWHM）在 850nm 时为 91ps。预计该 SPAD 能够在许多移动应用中，利用先进的标准技术实现具有成本效益的飞行时间和激光雷达传感器。
