• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于汽车激光雷达系统的具有增强近红外灵敏度的单光子雪崩二极管。

Single-Photon Avalanche Diode with Enhanced NIR-Sensitivity for Automotive LIDAR Systems.

作者信息

Takai Isamu, Matsubara Hiroyuki, Soga Mineki, Ohta Mitsuhiko, Ogawa Masaru, Yamashita Tatsuya

机构信息

Toyota Central R&D Labs., Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192, Japan.

出版信息

Sensors (Basel). 2016 Mar 30;16(4):459. doi: 10.3390/s16040459.

DOI:10.3390/s16040459
PMID:27043569
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4850973/
Abstract

A single-photon avalanche diode (SPAD) with enhanced near-infrared (NIR) sensitivity has been developed, based on 0.18 μm CMOS technology, for use in future automotive light detection and ranging (LIDAR) systems. The newly proposed SPAD operating in Geiger mode achieves a high NIR photon detection efficiency (PDE) without compromising the fill factor (FF) and a low breakdown voltage of approximately 20.5 V. These properties are obtained by employing two custom layers that are designed to provide a full-depletion layer with a high electric field profile. Experimental evaluation of the proposed SPAD reveals an FF of 33.1% and a PDE of 19.4% at 870 nm, which is the laser wavelength of our LIDAR system. The dark count rate (DCR) measurements shows that DCR levels of the proposed SPAD have a small effect on the ranging performance, even if the worst DCR (12.7 kcps) SPAD among the test samples is used. Furthermore, with an eye toward vehicle installations, the DCR is measured over a wide temperature range of 25-132 °C. The ranging experiment demonstrates that target distances are successfully measured in the distance range of 50-180 cm.

摘要

基于0.18μm CMOS技术,已开发出一种具有增强近红外(NIR)灵敏度的单光子雪崩二极管(SPAD),用于未来的汽车光探测和测距(LIDAR)系统。新提出的工作在盖革模式下的SPAD在不牺牲填充因子(FF)的情况下实现了高近红外光子探测效率(PDE),并且击穿电压低至约20.5V。这些特性是通过采用两个定制层获得的,这两个定制层旨在提供具有高电场分布的全耗尽层。对所提出的SPAD进行的实验评估显示,在870nm(即我们LIDAR系统的激光波长)处,填充因子为33.1%,光子探测效率为19.4%。暗计数率(DCR)测量表明,即使使用测试样品中最差的暗计数率(12.7kcps)的SPAD,其暗计数率水平对测距性能的影响也很小。此外,考虑到车辆安装,在25-132°C的宽温度范围内测量了暗计数率。测距实验表明,在50-180cm的距离范围内成功测量了目标距离。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/4867bae818ae/sensors-16-00459-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/c47961a7d28a/sensors-16-00459-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/74a8acf5c9f6/sensors-16-00459-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/27c90142ab78/sensors-16-00459-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/3e1b8570b39e/sensors-16-00459-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/d068f4f130c7/sensors-16-00459-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/ee5d4623d06e/sensors-16-00459-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/db2941c35102/sensors-16-00459-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/5b1f5548ed04/sensors-16-00459-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/4867bae818ae/sensors-16-00459-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/c47961a7d28a/sensors-16-00459-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/74a8acf5c9f6/sensors-16-00459-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/27c90142ab78/sensors-16-00459-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/3e1b8570b39e/sensors-16-00459-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/d068f4f130c7/sensors-16-00459-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/ee5d4623d06e/sensors-16-00459-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/db2941c35102/sensors-16-00459-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/5b1f5548ed04/sensors-16-00459-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc19/4850973/4867bae818ae/sensors-16-00459-g009.jpg

相似文献

1
Single-Photon Avalanche Diode with Enhanced NIR-Sensitivity for Automotive LIDAR Systems.用于汽车激光雷达系统的具有增强近红外灵敏度的单光子雪崩二极管。
Sensors (Basel). 2016 Mar 30;16(4):459. doi: 10.3390/s16040459.
2
Design and simulation of a near-infrared enhanced Si-based SPAD for an automotive LiDAR.
Appl Opt. 2023 Oct 1;62(28):7380-7386. doi: 10.1364/AO.498189.
3
Background Light Rejection in SPAD-Based LiDAR Sensors by Adaptive Photon Coincidence Detection.基于单光子雪崩二极管的激光雷达传感器中的背景光抑制:自适应光子符合探测。
Sensors (Basel). 2018 Dec 8;18(12):4338. doi: 10.3390/s18124338.
4
A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device.采用标准SOI CMOS技术制造的首个单光子雪崩二极管,并对该器件进行了全面表征。
Opt Express. 2015 May 18;23(10):13200-9. doi: 10.1364/OE.23.013200.
5
Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD.互补金属氧化物半导体单光子雪崩二极管中光子探测概率的建模、仿真方法及特性分析
Sensors (Basel). 2021 Aug 31;21(17):5860. doi: 10.3390/s21175860.
6
Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance.具有改进的 p-n 结和增强的近红外性能的电流辅助单光子雪崩二极管
Sensors (Basel). 2020 Dec 11;20(24):7105. doi: 10.3390/s20247105.
7
Small Imaging Depth LIDAR and DCNN-Based Localization for Automated Guided Vehicle.基于小成像深度激光雷达和深度卷积神经网络的自动导引车定位
Sensors (Basel). 2018 Jan 10;18(1):177. doi: 10.3390/s18010177.
8
Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage.在标准的 55nm 双极-CMOS-DMOS 工艺中制造的单光子雪崩二极管,具有低于 20V 的击穿电压。
Opt Express. 2023 Apr 24;31(9):13798-13805. doi: 10.1364/OE.485424.
9
A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology.采用先进的180纳米互补金属氧化物半导体技术制造的宽光谱范围单光子雪崩二极管。
Opt Express. 2012 Mar 12;20(6):5849-57. doi: 10.1364/OE.20.005849.
10
Custom single-photon avalanche diode with integrated front-end for parallel photon timing applications.用于并行光子计时应用的集成前端定制单光子雪崩二极管。
Rev Sci Instrum. 2012 Mar;83(3):033104. doi: 10.1063/1.3692737.

引用本文的文献

1
A new double multiplication region method to design high sensitivity and wide spectrum SPADs in standard CMOS technologies.一种用于在标准互补金属氧化物半导体(CMOS)技术中设计高灵敏度和宽光谱单光子雪崩二极管(SPAD)的新型双乘法区域方法。
Sci Rep. 2024 Nov 7;14(1):27118. doi: 10.1038/s41598-024-78070-6.
2
Feasibility of Hyperspectral Single Photon Lidar for Robust Autonomous Vehicle Perception.高光谱单光子激光雷达在稳健自动驾驶感知中的可行性。
Sensors (Basel). 2022 Aug 2;22(15):5759. doi: 10.3390/s22155759.
3
A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage.
一种具有超低击穿电压温度系数的近红外CMOS硅雪崩光电探测器。
Micromachines (Basel). 2021 Dec 29;13(1):47. doi: 10.3390/mi13010047.
4
SPADs and SiPMs Arrays for Long-Range High-Speed Light Detection and Ranging (LiDAR).SPAD 与硅光电倍增管阵列在远距离高速光探测和测距(LiDAR)中的应用。
Sensors (Basel). 2021 Jun 1;21(11):3839. doi: 10.3390/s21113839.
5
Design and Characterization of an Asynchronous Fixed Priority Tree Arbiter for SPAD Array Readout.用于 SPAD 阵列读出的异步固定优先级树仲裁器的设计与特性。
Sensors (Basel). 2021 Jun 8;21(12):3949. doi: 10.3390/s21123949.
6
A Scaling Law for SPAD Pixel Miniaturization.单光子雪崩二极管(SPAD)像素小型化的标度律
Sensors (Basel). 2021 May 15;21(10):3447. doi: 10.3390/s21103447.
7
Analytical Evaluation of Signal-to-Noise Ratios for Avalanche- and Single-Photon Avalanche Diodes.雪崩二极管和单光子雪崩二极管信噪比的分析评估
Sensors (Basel). 2021 Apr 20;21(8):2887. doi: 10.3390/s21082887.
8
Custom silicon technology for SPAD-arrays with red-enhanced sensitivity and low timing jitter.用于具有红色增强灵敏度和低定时抖动的单光子雪崩二极管阵列的定制硅技术。
Opt Express. 2021 Feb 1;29(3):4559-4581. doi: 10.1364/OE.413821.
9
Development of Reliable, High Performance WLCSP for BSI CMOS Image Sensor for Automotive Application.用于汽车应用的背照式CMOS图像传感器的可靠、高性能晶圆级芯片尺寸封装的开发。
Sensors (Basel). 2020 Jul 22;20(15):4077. doi: 10.3390/s20154077.
10
Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor.应用于CMOS图像传感器的单光子雪崩二极管(SPAD)中电容性弛豫猝灭的建模与分析
Sensors (Basel). 2020 May 25;20(10):3007. doi: 10.3390/s20103007.