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在 ZnGeP 中实现脉冲内差频产生,用于高频太赫兹波辐射产生。

Intra-pulse difference frequency generation in ZnGeP for high-frequency terahertz radiation generation.

机构信息

Department of Engineering Physics, École Polytechnique de Montréal, Succ. Centre-Ville, C. P. 6079, Montreal, QC, H3C 3A7, Canada.

Department of Electrical Engineering, University of Alberta, Edmonton, AB, T6G 2V4, Canada.

出版信息

Sci Rep. 2023 May 19;13(1):8161. doi: 10.1038/s41598-023-35131-6.

Abstract

The highly-nonlinear chalcopyrite crystal family has experienced remarkable success as source crystals in the mid-infrared spectral range, such that these crystals are primary candidates for producing high terahertz frequency (i.e., [Formula: see text] 10 THz) electric fields. A phase-resolved terahertz electric field pulse is produced via intra-pulse difference frequency generation in a chalcopyrite (110) ZnGeP crystal, with phase-matching being satisfied by the excitation electric field pulse having polarizations along both the ordinary and extraordinary crystal axes. While maximum spectral power is observed at the frequency of 24.5 THz (in agreement with intra-pulse phase-matching calculations), generation nonetheless occurs across the wide spectral range of 23-30 THz. To our knowledge, this is the first time a chalcopyrite ZnGeP crystal has been used for the generation of phase-resolved high-frequency terahertz electric fields.

摘要

黄铜矿晶体家族具有很强的非线性,在中红外光谱范围内作为晶源取得了显著的成功,因此这些晶体是产生高太赫兹频率(即 [Formula: see text] 10 THz)电场的主要候选者。通过在黄铜矿(110)ZnGeP 晶体中进行脉冲内差频产生,产生了相位分辨的太赫兹电场脉冲,相位匹配通过沿寻常和非常晶体轴的激励电场脉冲实现。虽然在 24.5 THz 的频率处观察到最大光谱功率(与脉冲内相位匹配计算一致),但在 23-30 THz 的宽光谱范围内仍然发生了产生。据我们所知,这是首次将黄铜矿 ZnGeP 晶体用于产生相位分辨的高频太赫兹电场。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9226/10199089/f7a9a9ae78a6/41598_2023_35131_Fig1_HTML.jpg

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