Piyathilaka Herath P, Sooriyagoda Rishmali, Dewasurendra Vikum, Johnson Matthew B, Zawilski Kevin T, Schunemann Peter G, Bristow Alan D
Opt Express. 2019 Jun 10;27(12):16958-16965. doi: 10.1364/OE.27.016958.
Optical rectification of near-infrared laser pulses generates broadband terahertz radiation in chalcopyrite crystals CdGeP, ZnGeP and CdSiP. The emission is characterized using linear-polarized excitation from 0.8 eV to 1.55 eV (1550 nm - 800 nm). All three crystals are (110)-cut and polished to 0.5 mm, thinner than the coherence length across most of the excitation photon energy range, such that they all produce a bandwidth ~2.5 THz when excited with ~100 fs pulses. It is found that CdGeP produced the strongest emission at telecoms wavelengths, while CdSiP is generally the strongest source. Pump-intensity dependence provides the nonlinear coefficients for each crystal.
近红外激光脉冲的光整流在黄铜矿晶体CdGeP、ZnGeP和CdSiP中产生宽带太赫兹辐射。使用从0.8电子伏特到1.55电子伏特（1550纳米 - 800纳米）的线性偏振激发来表征发射。所有这三种晶体均沿（110）切割并抛光至0.5毫米，比大多数激发光子能量范围内的相干长度更薄，因此当用约100飞秒脉冲激发时，它们都产生约2.5太赫兹的带宽。研究发现，CdGeP在电信波长处产生最强的发射，而CdSiP通常是最强的源。泵浦强度依赖性给出了每种晶体的非线性系数。
