Xiao Beibei, Yang Yongrui, Chen Shengnan, Zou Ye, Chen Xing, Liu Kanglei, Wang Nan, Qiao Yali, Yin Xiaodong
Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 102488, P. R. China.
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Green Printing, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing, 100190, P. R. China.
Chemistry. 2023 Aug 1;29(43):e202301055. doi: 10.1002/chem.202301055. Epub 2023 Jun 29.
Low band gap materials have always been a focus of attention due to their potential applications in various fields. In this work, a series of asymmetric bistricyclic aromatic ene (BAE) compounds with fluorenylidene-cyclopentadithiophene (FYT) skeleton were facially synthesized, which were modified with different substituents (-OMe, -SMe). The FYT core exhibit twisted C=C bond with dihedral angles around 30°, and the introduction of -SMe group can provide additional S⋅⋅⋅S interaction between molecules, which is conducive to the charge transporting. The UV-Vis spectra, electrochemistry and photoelectron spectroscopy revealed that these compounds have relatively narrow band gaps, particularly, the -SMe modified compounds have slightly lower HOMO and Fermi energy levels than that of the -OMe modified compounds. Furthermore, PSCs devices were fabricated with the three compounds as HTMs, and FYT-DSDPA exhibit the best performance among them, revealing the fine-tuning band structure could influence properties of HTMs.
低带隙材料因其在各个领域的潜在应用一直是人们关注的焦点。在这项工作中,一系列具有芴亚基-环戊二噻吩(FYT)骨架的不对称双三环芳烃烯(BAE)化合物被成功合成,并用不同的取代基(-OMe、-SMe)进行了修饰。FYT核心呈现出扭曲的C=C键,二面角约为30°,-SMe基团的引入可以在分子间提供额外的S⋅⋅⋅S相互作用,这有利于电荷传输。紫外-可见光谱、电化学和光电子能谱表明这些化合物具有相对较窄的带隙,特别是,-SMe修饰的化合物的最高占据分子轨道(HOMO)和费米能级比-OMe修饰的化合物略低。此外,以这三种化合物作为空穴传输材料(HTMs)制备了有机太阳能电池(PSCs)器件,其中FYT-DSDPA表现出最佳性能,这表明对能带结构的微调会影响空穴传输材料的性能。