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含三配位硼的噻吩基扭曲双三环芳香烯:一种新型n型半导体。

Thiophene-based twisted bistricyclic aromatic ene with tricoordinate boron: a new n-type semiconductor.

作者信息

Adachi Yohei, Nomura Takanori, Tazuhara Shion, Naito Hiroyoshi, Ohshita Joji

机构信息

Applied Chemistry Program, Graduate School of Advanced Science and Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan.

出版信息

Chem Commun (Camb). 2021 Feb 7;57(11):1316-1319. doi: 10.1039/d0cc07952a. Epub 2021 Jan 20.

DOI:10.1039/d0cc07952a
PMID:33471001
Abstract

The incorporation of tricoordinate boron into conjugated systems is of current interest in the field of organic electronics. In this study, a tricoordinate boron-embedded thiophene-based bistricyclic aromatic ene (BAE) was synthesized as a new boron-containing conjugated system. The combination of tricoordinate boron and fused thiophene rings imposed the twisted conformation in the BAE structure, resulting in the narrow energy absorption with the low-lying LUMO. Preliminary studies on the application of the highly electron-deficient boron-embedded BAE to organic field-effect transistors (OFETs) were also performed, revealing its moderately high electron mobility.

摘要

将三配位硼引入共轭体系是当前有机电子领域的研究热点。在本研究中,合成了一种嵌入三配位硼的噻吩基双环芳香烯(BAE)作为一种新型含硼共轭体系。三配位硼与稠合噻吩环的结合使BAE结构呈现扭曲构象,导致其具有较低的最低未占分子轨道(LUMO)的窄能吸收。还对高度缺电子的嵌入硼BAE在有机场效应晶体管(OFET)中的应用进行了初步研究,结果表明其具有中等偏高的电子迁移率。

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