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室温下六方氮化硼中单个自旋的相干控制。

Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature.

机构信息

CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.

CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.

出版信息

Nat Commun. 2023 May 20;14(1):2893. doi: 10.1038/s41467-023-38672-6.

Abstract

Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both the optical and spin properties are crucial for single spins but have not yet been discovered simultaneously for hBN spins. Here, we realize an efficient method for arraying and isolating the single defects of hBN and use this method to discover a new spin defect with a high probability of 85%. This single defect exhibits outstanding optical properties and an optically controllable spin, as indicated by the observed significant Rabi oscillation and Hahn echo experiments at room temperature. First principles calculations indicate that complexes of carbon and oxygen dopants may be the origin of the single spin defects. This provides a possibility for further addressing spins that can be optically controlled.

摘要

六方氮化硼(hBN)是一种出色的二维(2D)材料,它承载着固态自旋,并且在量子信息应用中具有很大的应用潜力,包括量子网络。然而,在这种应用中,光学和自旋性质对于单自旋都至关重要,但尚未同时在 hBN 自旋中发现。在这里,我们实现了一种高效的方法来排列和隔离 hBN 的单个缺陷,并使用该方法发现了一种新的自旋缺陷,其概率高达 85%。这个单缺陷表现出优异的光学性质和可光学控制的自旋,这可以通过在室温下观察到的显著的拉比振荡和哈恩回波实验来证明。第一性原理计算表明,碳和氧掺杂剂的复合物可能是单自旋缺陷的起源。这为进一步解决可光学控制的自旋提供了可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/740f/10199889/a13855c770e1/41467_2023_38672_Fig1_HTML.jpg

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