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大面积合成居里温度高于室温的铁磁体Fe₃GeTe₂/石墨烯范德华异质结构

Large-Area Synthesis of Ferromagnetic Fe GeTe /Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature.

作者信息

Lv Hua, da Silva Alessandra, Figueroa Adriana I, Guillemard Charles, Aguirre Iván Fernández, Camosi Lorenzo, Aballe Lucia, Valvidares Manuel, Valenzuela Sergio O, Schubert Jürgen, Schmidbauer Martin, Herfort Jens, Hanke Michael, Trampert Achim, Engel-Herbert Roman, Ramsteiner Manfred, Lopes Joao Marcelo J

机构信息

Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V, 10117, Berlin, Germany.

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain.

出版信息

Small. 2023 Sep;19(39):e2302387. doi: 10.1002/smll.202302387. Epub 2023 May 25.

Abstract

Van der Waals (vdW) heterostructures combining layered ferromagnets and other 2D crystals are promising building blocks for the realization of ultracompact devices with integrated magnetic, electronic, and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing for realizing highly uniform heterostructures with well-defined interfaces between different 2D-layered materials. It is also required that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, it is demonstrated that the large-area growth of Fe GeTe /graphene heterostructures is achieved by vdW epitaxy of Fe GeTe on epitaxial graphene. Structural characterization confirms the realization of a continuous vdW heterostructure film with a sharp interface between Fe GeTe and graphene. Magnetic and transport studies reveal that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond nonscalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.

摘要

将层状铁磁体与其他二维晶体相结合的范德华(vdW)异质结构,是实现具有集成磁、电和光学功能的超紧凑型器件的有前途的构建块。它们在各种技术中的应用很大程度上取决于自下而上的可扩展合成方法的发展,该方法能够实现具有不同二维层状材料之间明确界面的高度均匀异质结构。还要求异质结构的每个材料组件保持功能,理想情况下包括二维铁磁体在室温以上的铁磁有序。在此,通过在外延石墨烯上对FeₓGeTe进行范德华外延,实现了FeₓGeTe/石墨烯异质结构的大面积生长。结构表征证实了实现了具有FeₓGeTe与石墨烯之间清晰界面的连续范德华异质结构薄膜。磁性和输运研究表明,铁磁有序在300 K以上仍能很好地保持,且具有垂直磁各向异性。此外,SiC(0001)上的外延石墨烯继续表现出高电子质量。这些结果代表了超越不可扩展的薄片剥离和堆叠方法的重要进展,从而标志着在实际应用中实现铁磁二维材料的关键一步。

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