von Windheim Tasso, Gilchrist Kristin H, Parker Charles B, Hall Stephen, Carlson James B, Stokes David, Baldasaro Nicholas G, Hess Charles T, Scheick Leif, Rax Bernard, Stoner Brian, Glass Jeffrey T, Amsden Jason J
Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
RTI International, Research Triangle Park, NC 27709, USA.
Micromachines (Basel). 2023 Apr 29;14(5):973. doi: 10.3390/mi14050973.
This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10 S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments.
本文展示了一种完全集成的真空微电子或非逻辑门，它是利用垂直于器件衬底定向的微加工多晶硅面板与集成碳纳米管（CNT）场发射阴极制造而成。该真空微电子或非逻辑门由两个使用多晶硅多用户微机电系统工艺（polyMUMPs）制造的平行真空四极管组成。真空微电子或非门的每个四极管都表现出类似晶体管的性能，但由于阳极电压和阴极电流之间的耦合效应，未实现电流饱和，跨导较低，为7.6×10 S。两个四极管并行工作时，展示出了或非逻辑功能。然而，由于每个四极管中碳纳米管发射极性能存在差异，该器件表现出不对称性能。由于真空微电子器件在高辐射环境中具有应用吸引力，为测试该器件平台的辐射生存能力，我们展示了一种简化二极管器件结构在以45.6 rad(Si)/秒的速率进行伽马辐射照射期间的功能。这些器件代表了一个概念验证平台，可用于构建用于高辐射环境的复杂真空微电子逻辑器件。
