Opt Lett. 2023 Jun 1;48(11):2781-2784. doi: 10.1364/OL.486758.
Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for optical feedback and mode selection resulting in laser self-injection locking with narrow emission linewidth. Multiple group III-nitride (III-N) based photonic integrated circuit chips with different waveguide designs including single-crystalline AlN, AlGaN, and GaN were developed and characterized. Single-frequency laser operation was demonstrated for all studied waveguide core materials. The best side-mode suppression ratio was determined to be ∼36 dB at 412 nm with a single-frequency laser emission linewidth of only 3.8 MHz at 461 nm. The performance metrics of this novel, to the best of our knowledge, type of laser suggest potential implementation in next-generation, portable quantum systems.
基于芯片的、单频和低相位噪声集成光子激光二极管在紫光（412nm）和蓝光（461nm）区域发射。基于 GaN 的边发射激光二极管与高质量的片上微谐振器耦合，用于光学反馈和模式选择，从而实现激光自注入锁定，具有窄的发射线宽。开发和表征了具有不同波导设计的多个 III 族氮化物（III-N）基光子集成电路芯片，包括单晶 AlN、AlGaN 和 GaN。所有研究的波导芯材料都实现了单频激光操作。在 412nm 处，最佳边模抑制比约为 36dB，在 461nm 处，单频激光发射线宽仅为 3.8MHz。这种新型激光，据我们所知，的性能指标表明它有望在下一代、便携式量子系统中得到应用。
