Research Institute for Solar and Sustainable Energies (RISE) School of Materials Science and Engineering (SMSE), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
Samsung Electronics Co. Ltd, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 16677, Republic of Korea.
ACS Appl Mater Interfaces. 2023 Jun 21;15(24):29568-29576. doi: 10.1021/acsami.3c04435. Epub 2023 Jun 1.
Increasing the number of charge carriers flowing through the charge transport channel to improve the electrical performance of organic field-effect transistors (OFETs) is important because it leads to a low driving voltage and a high drain current value. This paper proposes a new strategy, the corona poling process, to enhance the electrical performance of OFETs using an external electric field when forming a dielectric film using a PVDF-based high-k dielectric terpolymer, P(VDF-TrFE-CFE). A corona poling process was applied to align the dipoles with high-k dielectric molecules and improve the capacitance, thereby increasing the number of charge carriers. Through this process, by observing the phase transition of a PVDF dielectric through a corona poling process in the GIWAXS data, the phase transition through an external electric field was thoroughly revealed for the first time. As a result, the capacitance of high-k dielectric films can be improved, and the amount of charge carriers can be increased by a simple corona poling process. In addition, to reduce the effect of deep trap sites caused by the dipole alignment, a thin low-k dielectric, polystyrene (PS), was introduced between the active and high-k dielectric layers to provide trap site passivation, thereby increasing the electrical performance of the OFET. Therefore, through this strategy, using a diketopyrrolopyrrole (DPP)-based donor-acceptor (D-A) copolymer as an active material of OFET, the average saturation region hole mobility was improved from 0.34 to 0.60 cm/Vs. Thus, the electrical performances of the OFETs were improved by enhancing the capacitance through the corona poling process and reducing the charge carrier trap sites introduced by the high-k and low-k bi-layer dielectric layer. Importantly, this work offers a new strategy for the post-treatment to improve electrical performance of organic devices.
增加流经电荷传输通道的电荷载流子数量以改善有机场效应晶体管 (OFET) 的电性能很重要,因为这会导致低驱动电压和高漏极电流值。本文提出了一种新策略,即电晕极化工艺,当使用基于 PVDF 的高 k 介电三元共聚物 P(VDF-TrFE-CFE) 形成介电膜时,利用外部电场来增强 OFET 的电性能。电晕极化工艺用于使高 k 介电分子的偶极子对齐并提高电容,从而增加电荷载流子的数量。通过该工艺,通过 GIWAXS 数据观察 PVDF 介电的电晕极化过程中的相变,首次彻底揭示了介电通过外部电场的相变。结果,可以改善高 k 介电膜的电容,并通过简单的电晕极化工艺增加电荷载流子的数量。此外,为了减少由偶极子对准引起的深陷阱位的影响,在有源层和高 k 介电层之间引入了薄的低 k 介电层聚苯乙烯 (PS) ,以提供陷阱位钝化,从而提高 OFET 的电性能。因此,通过该策略,使用基于二酮吡咯并吡咯(DPP)的给体-受体(D-A)共聚物作为 OFET 的活性材料,平均饱和区空穴迁移率从 0.34 提高到 0.60 cm/Vs。因此,通过电晕极化工艺增强电容并减少高 k 和低 k 双层介电层引入的电荷载流子陷阱位,提高了 OFET 的电性能。重要的是,这项工作为改善有机器件的电性能提供了一种新的后处理策略。