School of Electronic Information Engineering, Department of Electronic and Communication Engineering, Shanghai DianJi University, Shanghai 201306, People's Republic of China.
School of Electronic Information Engineering, Department of Software Engineering, Shanghai DianJi University, Shanghai 201306, People's Republic of China.
J Phys Condens Matter. 2023 Jun 13;35(36). doi: 10.1088/1361-648X/acdb24.
Effect of the internal interface layer on the dielectric properties of doped BaSrTiO(BST) films and their simulation research in filters. Based on the interfacial effect in the multi-layer ferroelectric thin film, a different number of internal interface layers was proposed and introduced into the BaSTiOthin film. First, BaSrTiZnO(ZBST) sol and BaSrTiMgO(MBST) sols were prepared using the sol-gel method. BaSrTiZnO/BaSrTiMgO/BaSrTiZnOthin films with 2 layer internal interface layer, 4 layer internal interface layer and 8 layer internal interface layer were designed and prepared (I2, I4, I8). The effects of the internal interface layer on the structure, morphology, dielectric properties, and leakage current behavior of the films were studied. The results showed that all the films were of the cubic perovskite BST phase and had the strongest diffraction peak in the (110) crystal plane. The surface composition of the film was uniform, and there was no cracked layer. When the bias of the applied DC field was 600 kV cm, the high-quality factor values of the I8 thin film at 10 MHz and 100 kHz were 111.3 and 108.6, respectively. The introduction of the internal interface layer changed the leakage current of the BaSrTiOthin film, and the I8 thin film exhibited the minimum leakage current density. The I8 thin-film capacitor was used as the tunable element to design a fourth-step 'tapped' complementary bandpass filter. When the permittivity was reduced from 500 to 191, the central frequency-tunable rate of the filter was 5.7%.
掺杂 BaSrTiO（BST）薄膜的介电性能及其在滤波器中的模拟研究。基于多层铁电薄膜的界面效应，提出并引入不同数量的内界面层到 BaSrTiO 薄膜中。首先，采用溶胶-凝胶法制备 BaSrTiZnO（ZBST）溶胶和 BaSrTiMgO（MBST）溶胶。设计并制备了具有 2 层内界面层、4 层内界面层和 8 层内界面层的 BaSrTiZnO/BaSrTiMgO/BaSrTiZnO 薄膜（I2、I4、I8）。研究了内界面层对薄膜的结构、形貌、介电性能和漏电流行为的影响。结果表明，所有薄膜均为立方钙钛矿 BST 相，在（110）晶面具有最强的衍射峰。薄膜表面组成均匀，无裂纹层。当施加的直流电场偏压为 600 kV cm 时，I8 薄膜在 10 MHz 和 100 kHz 下的高品质因数值分别为 111.3 和 108.6。内界面层的引入改变了 BaSrTiO 薄膜的漏电流，I8 薄膜表现出最小的漏电流密度。I8 薄膜电容器作为可调元件，设计了四阶“抽头”互补带通滤波器。当介电常数从 500 降低到 191 时，滤波器的中心频率可调率为 5.7%。
