Nussbaum Simon, Socie Etienne, Fish George C, Diercks Nicolas J, Hempel Hannes, Friedrich Dennis, Moser Jacques-E, Yum Jun-Ho, Sivula Kevin
Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, Institute of Chemical Sciences and Engineering (ISIC), École Polytechnique Fédérale de Lausanne (EPFL) 1015 Lausanne Switzerland
Photochemical Dynamics Group, Institute of Chemical Sciences and Engineering (ISIC), École Polytechnique Fédérale de Lausanne (EPFL) 1015 Lausanne Switzerland.
Chem Sci. 2023 May 15;14(22):6052-6058. doi: 10.1039/d3sc00783a. eCollection 2023 Jun 7.
Incorporating organic semiconducting spacer cations into layered lead halide perovskite structures provides a powerful approach to mitigate the typical strong dielectric and quantum confinement effects by inducing charge-transfer between the organic and inorganic layers. Herein we report the synthesis and characterization of thin films of novel DJ-phase organic-inorganic layered perovskite semiconductors using a naphthalene diimide (NDI) based divalent spacer cation, which is shown to accept photogenerated electrons from the inorganic layer. With alkyl chain lengths of 6 carbons, an NDI-based thin film exhibited electron mobility (based on space charge-limited current for quasi-layered 〈〉 = 5 material) was found to be as high as 0.03 cm V s with no observable trap-filling region suggesting trap passivation by the NDI spacer cation.
将有机半导体间隔阳离子引入层状卤化铅钙钛矿结构中，通过诱导有机层和无机层之间的电荷转移，为减轻典型的强介电和量子限制效应提供了一种有效方法。在此，我们报道了使用基于萘二亚胺（NDI）的二价间隔阳离子合成和表征新型DJ相有机-无机层状钙钛矿半导体薄膜，该阳离子被证明可从无机层接受光生电子。对于碳链长度为6的烷基，基于NDI的薄膜表现出电子迁移率（基于准层状〈〉 = 5材料的空间电荷限制电流）高达0.03 cm V s，且未观察到陷阱填充区域，这表明NDI间隔阳离子使陷阱钝化。
