Jessadaluk Sukittaya, Khemasiri Narathon, Kayunkid Navaphun, Rangkasikorn Adirek, Wirunchit Supamas, Tammarugwattana Narin, Mano Kitipong, Chananonnawathorn Chanunthorn, Horprathum Mati, Klamchuen Annop, Rahong Sakon, Nukeaw Jiti
King Mongkut's Institute of Technology Ladkrabang, College of Materials Innovation and Technology, Chalongkrung Rd., Ladkrabang, Bangkok 10520, Thailand.
Research Institute for Electronic Science, Hokkaido University N20 W10, Kita, Sapporo 001-0020, Japan.
Nanomaterials (Basel). 2023 Jun 4;13(11):1799. doi: 10.3390/nano13111799.
This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the SbO:ZnO-ablating target. By increasing the content of SbO (wt.%) in the target, Sb became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% SbO. The substituted Sb species in the Zn site (Sb and Sb) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb-Zn complex defects (Sb-2V) contributed to the formation of p-type conductivity at high-level doping. The increase in SbO content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p-n junctions.
本研究系统地研究了锑（Sb）物种对在富氧环境中通过脉冲激光沉积制备的锑掺杂氧化锌（SZO）薄膜电学性能的影响。通过增加SbO:ZnO烧蚀靶中Sb的含量，通过每个原子能量的定性变化来控制与Sb物种相关的缺陷。通过增加靶中SbO（重量%）的含量，Sb成为等离子体羽流中主要的Sb烧蚀物种。因此，在使用含2 wt.% SbO的烧蚀靶制备的SZO薄膜中，n型导电性转变为p型导电性。Zn位点上取代的Sb物种（Sb和Sb）在低水平Sb掺杂时负责形成n型导电性。另一方面，Sb-Zn复合缺陷（Sb-2V）在高水平掺杂时有助于形成p型导电性。烧蚀靶中SbO含量的增加导致每个Sb离子能量的定性变化，为使用基于ZnO的p-n结实现高性能光电器件提供了一条新途径。
