Escobedo Morales A, Pal U, Herrera Zaldivar M
Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apdo. Postal J-48, C.P. 72570, Puebla, Pue., Mexico.
J Nanosci Nanotechnol. 2008 Dec;8(12):6551-7.
Incorporation of dopants in optoelectronic semiconductor nanostructures has been a matter of great interest in recent times. While such doping has been performed almost routinely using physical methods, use of low-cost chemical techniques for that purpose is still rare. We incorporated antimony in zinc oxide (ZnO) nanostructures through a low temperature hydrothermal method. In as-grown nanostructures, antimony remains partially in Sb2O3 phase. On thermal annealing at 500 degrees C, it dissociates and antimony incorporates into ZnO mainly by substituting zinc from the crystal lattice. Incorporation of Sb drastically modifies the morphology of the ZnO nanostructures. While incorporation of Sb in low concentration promotes the formation of uniform prismatic ZnO nanorods probably due to catalytic effect, high concentration of Sb causes the formation of rounded shaped nanoparticles due to high interfacial compressive stress. Incorporated Sb in the ZnO nanostructures remains inhomogeneously distributed. The optical band gap of the ZnO nanostructures increases a bit for lightly doped samples but it decreases for heavy doping.
近年来，在光电子半导体纳米结构中掺入掺杂剂一直是备受关注的问题。虽然几乎一直通过物理方法常规地进行这种掺杂，但为此目的使用低成本化学技术的情况仍然很少见。我们通过低温水热法在氧化锌（ZnO）纳米结构中掺入了锑。在生长的纳米结构中，锑部分保留在Sb2O3相中。在500℃进行热退火时，它会解离，锑主要通过取代晶格中的锌而掺入ZnO中。锑的掺入极大地改变了ZnO纳米结构的形态。虽然低浓度掺入锑可能由于催化作用促进了均匀棱柱形ZnO纳米棒的形成，但高浓度的锑由于高界面压缩应力导致形成圆形纳米颗粒。掺入ZnO纳米结构中的锑仍然分布不均匀。对于轻掺杂样品，ZnO纳米结构的光学带隙略有增加，但对于重掺杂则减小。
