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硫代钒酸盐BaS(VSO)(S)及其硒化物衍生物中硫属化物和二硫属化物阴离子的多功能相互作用:制备与DFT元广义梯度近似研究

Versatile Interplay of Chalcogenide and Dichalcogenide Anions in the Thiovanadate BaS(VSO)(S) and Its Selenide Derivatives: Elaboration and DFT Meta-GGA Study.

作者信息

Almoussawi Batoul, Kageyama Hiroshi, Roussel Pascal, Kabbour Houria

机构信息

Univ. Lille, CNRS, Centrale Lille, ENSCL, Univ. Artois, UMR 8181-UCCS-Unité de Catalyse et Chimie du Solide, F-59000 Lille, France.

Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan.

出版信息

ACS Org Inorg Au. 2023 May 2;3(3):158-170. doi: 10.1021/acsorginorgau.3c00006. eCollection 2023 Jun 7.

Abstract

Oxychalcogenides are emerging as promising alternative candidates for a variety of applications including for energy. Only few phases among them show the presence of Q-Q bonds (Q = chalcogenide anion) while they drastically alter the electronic structure and allow further structural flexibility. Four original oxy(poly)chalcogenide compounds in the system Ba-V-Q-O (Q = S, Se) were synthesized, characterized, and studied using density functional theory (DFT). The new structure type found for BaVOS, which can be written as BaS(VSO)(S), was substituted to yield three selenide derivatives BaVOSSe, BaVOSSe, and BaVOSSe. They represent original multiple-anion lattices and first members in the system Ba-V-Se-S-O. They exhibit in the first layer heteroleptic tetrahedra VSO and isolated Q anions and in the second layer dichalcogenide pairs (Q) with Q = S or Se. Selenide derivatives were attempted by targeting the selective substitution of isolated Q or (Q) (in distinct layers) or both by selenide, but it systematically led to concomitant and partial substitution of both sites. A DFT meta-GGA study showed that selective substitution yields local constraints due to rigid VOS and pairs. Experimentally, incorporation of selenide in both layers avoids geometrical mismatch and constraints. In such systems, we show that the interplay between the O/S anionic ratio around V, together with the presence/nature of the dichalcogenides (Q) and isolated Q, impacts in unique manners the band gap and provides a rich background to tune the band gap and the symmetry.

摘要

氧硫族化合物正成为包括能源领域在内的各种应用中颇具前景的替代候选材料。其中只有少数物相显示存在Q-Q键(Q = 硫族阴离子),而这些键会极大地改变电子结构并允许进一步的结构灵活性。在Ba-V-Q-O体系(Q = S,Se)中合成、表征并利用密度泛函理论(DFT)研究了四种原始的氧(多)硫族化合物。发现了BaVOS的新结构类型,可写成BaS(VSO)(S),通过取代得到了三种硒化物衍生物BaVOSSe、BaVOSSe和BaVOSSe。它们代表了原始的多阴离子晶格,是Ba-V-Se-S-O体系中的首批成员。它们在第一层中呈现杂配体四面体VSO和孤立的Q阴离子,在第二层中呈现二硫族化物对(Q),其中Q = S或Se。尝试通过用硒化物选择性取代孤立的Q或(Q)(在不同层中)或两者来制备硒化物衍生物,但这系统地导致了两个位点的同时和部分取代。一项DFT元广义梯度近似研究表明,由于刚性的VOS和对,选择性取代会产生局部限制。实验上,在两层中引入硒化物可避免几何失配和限制。在这样的体系中,我们表明V周围的O/S阴离子比例与二硫族化物(Q)和孤立Q的存在/性质之间的相互作用以独特的方式影响带隙,并为调节带隙和对称性提供了丰富的背景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/51e8/10251500/660a7d599070/gg3c00006_0002.jpg

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