Department of Electronics Technology, Guru Nanak Dev University, Amritsar, 143005, India.
Department of Engineering and Technology, Guru Nanak Dev University Regional Campus, Jalandhar, 144007, India.
J Mol Model. 2023 Jun 13;29(7):208. doi: 10.1007/s00894-023-05615-3.
This study aims to tune the transport properties of tetracene single-molecule junctions with the proper choice and placement of side and anchoring groups. For the operationalization of the molecule that was anchored with thiol or isocyanide groups, two different side groups, amine and nitro, in two different positions, were taken into consideration. For unperturbed tetracene molecule, a prominent negative differential resistance (NDR) feature at 1.8 V was observed with the isocyanide anchoring group while the thiol anchoring group exhibits a plateau region over a bias voltage of 2.2 to 3.2 V. At a bias voltage that is dependent on the chemical or structural change of side or anchoring groups, NDR feature of varying degree was seen in all configurations. Results show that the current flowing through the thiol-anchored molecule perturbed with the amine group at S' position is relatively larger than other configurations because of the smaller HOMO-LUMO gap and broader transmission peaks resulting in a peak to valley current ratio (PVCR) of 1.22. In addition, multiple NDR regions were realized in nitro-perturbed isocyanide-anchored molecule at S position. These results suggest their promising applications in switches, logic cells, and storage devices.
The modeling and simulation of side-group mediated anchored tetracene molecule through two electrodic systems were studied using density functional theory (DFT) combined with non-equilibrium Green's function (NEGF) in Virtual NanoLab-AtomistixToolkit (ATK). The electron transport properties were calculated using Perdew-Burke-Ernzerhof (PBE) generalized gradient approximation (GGA) exchange-correlation function. To optimize computing time, gold electrodes were single zeta polarized whereas the molecule, anchor groups, and side groups were double zeta polarized.
本研究旨在通过适当选择和放置侧基和锚定基团来调整并四苯单分子结的输运性质。对于用硫醇或异氰酸酯基团锚定的分子,考虑了两种不同位置的两种不同侧基(胺基和硝基)。对于未被扰动的并四苯分子,用异氰酸酯锚定基团观察到明显的负微分电阻(NDR)特征,在 1.8 V 时出现,而硫醇锚定基团在 2.2 至 3.2 V 的偏压下呈现平台区。在依赖于侧基或锚定基团的化学或结构变化的偏压下,所有构型中都观察到不同程度的 NDR 特征。结果表明,由于 HOMO-LUMO 间隙较小和传输峰较宽,流过 S'位置被胺基扰动的硫醇锚定分子的电流相对较大,导致峰值到谷值电流比(PVCR)为 1.22。此外,在 S 位置的硝基扰动的异氰酸酯锚定分子中实现了多个 NDR 区域。这些结果表明它们在开关、逻辑单元和存储设备中有很有前景的应用。
通过密度泛函理论(DFT)结合非平衡格林函数(NEGF)在 Virtual NanoLab-AtomistixToolkit(ATK)中研究了通过两种电极系统的侧基介导的锚定并四苯分子。使用 Perdew-Burke-Ernzerhof(PBE)广义梯度近似(GGA)交换相关函数计算电子输运性质。为了优化计算时间,金电极采用单 zeta 极化,而分子、锚定基团和侧基采用双 zeta 极化。