Checri Rayann, Chipaux Mathilde, Ferrand-Sorbets Sarah, Raffo Emmanuel, Bulteau Christine, Rosenberg Sarah Dominique, Doladilhe Marion, Dorfmüller Georg, Adle-Biassette Homa, Baldassari Sara, Baulac Stéphanie
Sorbonne Université, Institut du Cerveau-Paris Brain Institute-ICM, Inserm, CNRS, Hôpital de la Pitié Salpêtrière, 75013, Paris, France.
Department of Pediatric Neurosurgery, Rothschild Foundation Hospital EpiCARE, 75019, Paris, France.
Brain Commun. 2023 Jun 1;5(3):fcad174. doi: 10.1093/braincomms/fcad174. eCollection 2023.
Brain-restricted somatic variants in genes of the mechanistic target of rapamycin signalling pathway cause focal epilepsies associated with focal cortical dysplasia type II. We hypothesized that somatic variants could be identified from trace tissue adherent to explanted stereoelectroencephalography electrodes used in the presurgical epilepsy workup to localize the epileptogenic zone. We investigated three paediatric patients with drug-resistant focal epilepsy subjected to neurosurgery. In the resected brain tissue, we identified low-level mosaic somatic mutations in and genes. We collected stereoelectroencephalography depth electrodes in the context of a second presurgical evaluation and identified 4/33 mutation-positive electrodes that were either located in the epileptogenic zone or at the border of the dysplasia. We provide the proof-of-concept that somatic mutations with low levels of mosaicism can be detected from individual stereoelectroencephalography electrodes and support a link between the mutation load and the epileptic activity. Our findings emphasize future opportunities for integrating genetic testing from stereoelectroencephalography electrodes into the presurgical evaluation of refractory epilepsy patients with focal cortical dysplasia type II to improve the patients' diagnostic journey and guide towards precision medicine.
雷帕霉素作用机制靶点信号通路基因中的脑限制性体细胞变异导致与II型局灶性皮质发育不良相关的局灶性癫痫。我们假设可以从术前癫痫评估中用于定位致痫区的植入式立体定向脑电图电极上附着的微量组织中识别出体细胞变异。我们研究了3例接受神经外科手术的耐药性局灶性癫痫患儿。在切除的脑组织中,我们在 和 基因中鉴定出低水平的嵌合体细胞突变。我们在第二次术前评估时收集了立体定向脑电图深度电极,并在4/33个突变阳性电极中识别出位于致痫区或发育异常边界处的电极。我们提供了概念验证,即可以从单个立体定向脑电图电极中检测到低水平嵌合的体细胞突变,并支持突变负荷与癫痫活动之间的联系。我们的研究结果强调了未来将立体定向脑电图电极的基因检测整合到II型局灶性皮质发育不良难治性癫痫患者术前评估中的机会,以改善患者的诊断过程并导向精准医学。