Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany.
Institute of Materials Science, Technische Universität Dresden, 01069 Dresden, Germany.
ACS Appl Mater Interfaces. 2023 Jun 28;15(25):30517-30523. doi: 10.1021/acsami.3c05634. Epub 2023 Jun 16.
B20-CoSi is a newly discovered Weyl semimetal that crystallizes into a noncentrosymmetric crystal structure. However, the investigation of B20-CoSi has so far been focused on bulk materials, whereas the growth of thin films on technology-relevant substrates is a prerequisite for most practical applications. In this study, we have used millisecond-range flash-lamp annealing, a nonequilibrium solid-state reaction, to grow B20-CoSi thin films. By optimizing the annealing parameters, we were able to obtain thin films with a pure B20-CoSi phase. The magnetic and transport measurements indicate the appearance of the charge density wave and chiral anomaly. Our work presents a promising method for preparing thin films of most binary B20 transition-metal silicides, which are candidates for topological Weyl semimetals.
B20-CoSi 是一种新发现的外尔半金属，其结晶为非中心对称晶体结构。然而，到目前为止，对 B20-CoSi 的研究主要集中在体材料上，而在与技术相关的衬底上生长薄膜是大多数实际应用的前提。在这项研究中，我们使用毫秒级闪光灯退火这一非平衡固态反应来生长 B20-CoSi 薄膜。通过优化退火参数，我们能够获得具有纯 B20-CoSi 相的薄膜。磁性和输运测量表明电荷密度波和手性异常的出现。我们的工作为制备大多数二元 B20 过渡金属硅化物的薄膜提供了一种很有前景的方法，这些硅化物是拓扑外尔半金属的候选材料。
