Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China.
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China.
ACS Appl Mater Interfaces. 2023 Jun 28;15(25):30504-30516. doi: 10.1021/acsami.3c05283. Epub 2023 Jun 19.
In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D BiOSe nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (-axis) of BiOSe nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the BiOSe/MoSe photodiode designed with type-II band alignment demonstrates a high rectification ratio of 10. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities () and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (-axis) of BiOSe nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D BiOSe nanowires. Furthermore, 1D BiOSe nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.
近年来，基于一维/二维（1D/2D）范德华（vdW）异质结构的偏振敏感光电二极管由于具有高的比表面积、一维结构的强取向度以及二维结构的大光活性面积和机械灵活性而受到广泛关注。因此，它们适用于可穿戴电子、电驱动激光器、图像感应、光通信、光开关等领域。在此，通过化学气相沉积成功合成了 1D BiOSe 纳米线。令人印象深刻的是，具有高结晶质量的 BiOSe 纳米线的最强拉曼振动模式可以沿着短边（-轴）实现，这源于 Se 和 Bi 空位。此外，设计的具有 II 型能带排列的 BiOSe/MoSe 光电二极管表现出 10 的高整流比。直观地说，在自供电模式和反向偏置下，光电流峰主要分布在重叠区域内，波长范围为 400nm。该器件表现出优异的光电性能，包括高光响应率（）和快速响应速度（656 mA/W 和 350/380 μs（零偏压）和 17.17 A/W 和 100/110 μs（-1 V）在 635nm 光照下），超过了大多数报道的混合维光电二极管。我们的光电二极管的最显著特征是在 635nm 光照下，沿着 BiOSe 纳米线的长边（-轴）具有约 2.2（-0.8 V）的最高光电流各向异性比。上述结果揭示了一维 BiOSe 纳米线的结构缺陷与偏振方向之间存在稳健而独特的相关性。此外，一维 BiOSe 纳米线似乎是基于混合 vdW 异质结构的高性能整流器、偏振敏感光电二极管和光电晶体管的理想候选材料。
