Gan Wei, Liu Yucheng, Liu Xue, Xiao Ruichun, Ni Kaipeng, Jiang Ming, Han Hui, Zhou Xiaoya, Li Sijia, Wu Chuanqiang, Li Yang, Li Hui
Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, China.
ACS Appl Mater Interfaces. 2024 May 15;16(19):24943-24950. doi: 10.1021/acsami.4c03233. Epub 2024 May 2.
Designing high-performance polarization-sensitive photodetectors is essential for photonic device applications. Anisotropic one-dimensional (1D) van der Waals (vdW) materials have provided a promising platform to that end. Despite significant advances in 1D vdW photonic devices, their performance is still far from delivering practical potential. Herein, we propose the design of high-performance polarization-sensitive photodetectors using unique 1D vdW materials. By leveraging the chemical vapor transport technique, we successfully fabricate high-quality 1D vdW NbPdSe ( = 0.29) nanowires. The 1D vdW NbPdSe photodetector exhibits a high mobility of ∼56 cm/(V s) and superior photoresponse performance, including a high responsivity of 1A/W and an ultrafast response time of ∼8 μs under 638 nm illumination. Moreover, the 1D vdW NbPdSe photodetector demonstrates excellent polarization-sensitive photoresponse with a degree of linear polarization (DOLP) up to 0.85 and can be modulated by adjusting the gate voltage, laser power density, and wavelength. Those exceptional performance are believed to be relevant to the symmetry-reduction induced by the partial occupation of Pd sites. This study offers feasible approaches to enhance the anisotropy of 1D vdW materials and the modulation of their polarization-sensitive photoresponse, which may provide deep insights into the physical origin of anisotropic properties of 1D vdW materials.
设计高性能偏振敏感光电探测器对于光子器件应用至关重要。各向异性的一维(1D)范德华(vdW)材料为此提供了一个很有前景的平台。尽管一维vdW光子器件取得了显著进展,但其性能仍远未发挥出实际潜力。在此,我们提出使用独特的一维vdW材料设计高性能偏振敏感光电探测器。通过利用化学气相传输技术,我们成功制备了高质量的一维vdW NbPdSe( = 0.29)纳米线。一维vdW NbPdSe光电探测器表现出约56 cm²/(V·s)的高迁移率和优异的光响应性能,包括在638 nm光照下1 A/W的高响应度和约8 μs的超快响应时间。此外,一维vdW NbPdSe光电探测器展示了高达0.85的线性偏振度(DOLP)的优异偏振敏感光响应,并且可以通过调节栅极电压、激光功率密度和波长进行调制。这些优异性能被认为与Pd位点部分占据引起的对称性降低有关。本研究提供了增强一维vdW材料各向异性及其偏振敏感光响应调制的可行方法,这可能为深入了解一维vdW材料各向异性特性的物理起源提供深刻见解。