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应变诱导 MgN 氮化物从半导体到导体的转变。

Transition from semiconductor to conductor of a MgN electride induced by strain.

机构信息

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.

Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China.

出版信息

Phys Chem Chem Phys. 2023 Jul 5;25(26):17300-17305. doi: 10.1039/d3cp01764h.

Abstract

Electrides are a class of materials in which electrons are not bound to atoms but are similar to anions in crystals. To date, there are more than 300 electrides that have been discovered by first-principles. Alkaline-earth metal nitrides (AEN, AE = Be, Mg, Ca, Sr, and Ba) are an important component of electride materials. CaN, SrN, and BaN structures have been identified and synthesized in previous research studies. Furthermore, the structures of BeN (3̄ symmetry) and MgN (3 symmetry) were recently identified. For MgN, it has zero-dimension (0D) interstitial localized electrons and band structure with semiconductor properties, which is significantly different from the other AEN structures (two-dimension electrides and metal properties). Consequently, MgN was systematically studied in this work. We found that the pristine MgN was an indirect band gap semiconductor with a band gap of 0.243 eV. It transitioned to a metal when 2% stretch stress was applied to the -axis. Moreover, at 5% stretch stress, the structure exhibited 2D interstitial localized electrons with the superconducting transition temperature () of 0.3 K. These studies thus provide a deeper understanding of the physicochemical properties of MgN as an electride.

摘要

电子化物是一类材料,其中电子不是与原子结合,而是类似于晶体中的阴离子。迄今为止,已经通过第一性原理发现了 300 多种电子化物。碱土金属氮化物(AEN,AE=Be、Mg、Ca、Sr 和 Ba)是电子化物材料的重要组成部分。在以前的研究中已经确定并合成了 CaN、SrN 和 BaN 结构。此外,BeN(3̄对称)和 MgN(3 对称)的结构最近也被确定。对于 MgN,它具有零维(0D)间隙局域电子和半导体性质的能带结构,这与其他 AEN 结构(二维电子化物和金属性质)明显不同。因此,MgN 在这项工作中得到了系统的研究。我们发现原始的 MgN 是一种间接带隙半导体,带隙为 0.243eV。当施加 -轴 2%拉伸应力时,它会转变为金属。此外,在 5%拉伸应力下,结构表现出 2D 间隙局域电子,超导转变温度()为 0.3K。这些研究因此提供了对 MgN 作为电子化物的物理化学性质的更深入理解。

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