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通过取代金属掺杂实现室温范德瓦尔斯磁体的巨磁各向异性增强。

Giant coercivity enhancement in a room-temperature van der Waals magnet through substitutional metal-doping.

机构信息

SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 16419, Korea.

Department of Physics Education, Sunchon National University, Suncheon 57922, Korea.

出版信息

Nanoscale. 2023 Jul 6;15(26):11290-11298. doi: 10.1039/d3nr00681f.

Abstract

FeGeTe ( = 3, 4, and 5) systems, two-dimensional (2D) van der Waals (vdW) ferromagnetic (FM) metals with high Curie temperatures (), have been intensively studied to realize all-2D spintronic devices. Recently, an intrinsic FM material FeGaTe with high (350-380 K) has been reported. As substitutional doping changes the magnetic properties of vdW magnets, it can be a powerful means for engineering the properties of magnetic materials. Here, the coercive field () is substantially enhanced by substituting Ni for Fe in (FeNi)GaTe crystals. The introduction of a Ni dopant with = 0.03 can enhance the value of up to ∼200% while maintaining the FM state at room temperature. As the doping level increases, decreases, whereas increases up to 7 kOe at = 0.12, which is the highest reported so far. The FM characteristic is almost suppressed at = 0.68 and a spin glass state appears. The enhancement of resulting from Ni doping can be attributed to domain pinning induced by substitutional Ni atoms, as evidenced by the decrease in magnetic anisotropy energy in the crystals upon Ni doping. Our findings provide a highly effective way to control the of the 2D vdW FM metal FeGaTe for the realization of FeGaTe based room-temperature operating spintronic devices.

摘要

FeGeTe(=3、4 和 5)体系是具有高居里温度()的二维(2D)范德华(vdW)铁磁(FM)金属,被广泛研究用于实现全 2D 自旋电子器件。最近,报道了一种具有高居里温度(350-380 K)的本征 FM 材料 FeGaTe。由于替代掺杂可以改变 vdW 磁体的磁性,因此它可以成为工程磁性材料性能的有力手段。在这里,通过用 Ni 替代(FeNi)GaTe 晶体中的 Fe,可以显著增强矫顽场()。引入 Ni 掺杂剂,其浓度为 = 0.03,可以将值提高到约 200%,同时在室温下保持 FM 状态。随着掺杂水平的增加,降低,而在 = 0.12 时增加到 7 kOe,这是迄今为止报道的最高值。在 = 0.68 时,FM 特性几乎被抑制,出现自旋玻璃状态。Ni 掺杂导致的增加可以归因于替代 Ni 原子引起的畴钉扎,这可以通过 Ni 掺杂后晶体中磁各向异性能的降低得到证明。我们的发现为控制二维 vdW FM 金属 FeGaTe 的提供了一种非常有效的方法,可用于实现基于 FeGaTe 的室温工作的自旋电子器件。

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