Son Ki-Hoon, Oh Sehoon, Lee Junho, Yun Sobin, Shin Yunseo, Yan Shaohua, Jang Chaun, Lee Hong-Sub, Lei Hechang, Park Se Young, Ryu Hyejin
Center for Semiconductor Technology, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, 17104, South Korea.
Nano Converg. 2024 Dec 12;11(1):55. doi: 10.1186/s40580-024-00458-x.
Room-temperature magnetism and its stability upon miniaturization are essential characteristics required for materials for spintronic devices and information storage. Among various candidates, FeGaTe stands out due to its high Curie temperature and strong perpendicular magnetic anisotropy (PMA), recently gaining large attention as one of the promising candidate materials for spintronics applications. In this study, we measured the thickness-dependent ferromagnetic properties of FeGaTe and (FeNi)GaTe (with x = 0.1) flakes. We observed that both pristine and Ni-doped FeGaTe exhibit persistent ferromagnetism, with only a minor decrease in T as the thickness is reduced to a few tens of nanometers. This capacity to retain robust ferromagnetic properties at reduced dimensions is highly advantageous for thin-film applications, which is crucial for the scaling of spintronic devices. Understanding and controlling thickness-dependent magnetic properties is fundamental to harnessing the full potential of FeGaTe in van der Waals magnetic heterostructures and advanced spintronic technologies.
室温磁性及其在小型化过程中的稳定性是自旋电子器件和信息存储材料所需的基本特性。在各种候选材料中，FeGaTe因其高居里温度和强垂直磁各向异性（PMA）而脱颖而出，最近作为自旋电子学应用中很有前景的候选材料之一受到广泛关注。在本研究中，我们测量了FeGaTe和(FeNi)GaTe（x = 0.1）薄片的厚度依赖性铁磁特性。我们观察到，原始的和镍掺杂的FeGaTe都表现出持续的铁磁性，当厚度减小到几十纳米时，居里温度（Tc）仅略有下降。在减小尺寸时仍能保持强大铁磁特性的这种能力对于薄膜应用非常有利，这对于自旋电子器件的缩放至关重要。理解和控制厚度依赖性磁特性是在范德华磁异质结构和先进自旋电子技术中充分发挥FeGaTe潜力的基础。
